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Physical AMD Electrical Properties of Iridium Thin Films

Published online by Cambridge University Press:  25 February 2011

R. G. Elliman ,
M. A. Lawn ,
G. K. Reeves  and
C. Jagadish
R. G. Elliman
Affiliation:
Electronic Materials Engineering Department, Australian National University, Canberra, Australia
M. A. Lawn
Affiliation:
Microelectronic and Materials Technology Centre, R.M.I.T., Melbourne, Australia.
G. K. Reeves
Affiliation:
Microelectronic and Materials Technology Centre, R.M.I.T., Melbourne, Australia.
C. Jagadish
Affiliation:
Electronic Materials Engineering Department, Australian National University, Canberra, Australia
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Abstract

Thin Ir films were deposited onto clean (111) Si surfaces. The films were analysed by Rutherford backscattering and transmission electron microscopy and were shown to be continuous for film thicknesses as small as 0.5nm. The films contained internal stress as deposited and coiled up when the substrate was removed chemically.

A four point probe was employed to measure the resistivity of the films as a function of film thickness. The resistivity increased with decreasing film thickness, from ∼35 micro-Ohm. cm for 160nm thick films to -190 micro-Ohm. cm for 0.5nm thick films. This increase in resistivity is shown to be consistent with theories of carrier transport in thin films.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 260: Symposium C – Advanced Metallization and Processing for Semiconductor Devices and Circuits , 1992 , 569
Copyright
Copyright © Materials Research Society 1992

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References

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