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Photovoltaic Properties of Fullerene (C60) Thin films

Published online by Cambridge University Press:  10 February 2011

E. A. Katz ,
D. Faiman ,
S. Goren ,
S. Shtutina ,
A. Shames ,
B. Mishori  and
Yoram Shapira
E. A. Katz
Affiliation:
National Solar Energy Center, Ben-Gurion University of the Negev, Sede Boker Campus, 84990 ISRAEL, [email protected]
D. Faiman
Affiliation:
National Solar Energy Center, Ben-Gurion University of the Negev, Sede Boker Campus, 84990 ISRAEL, [email protected]
S. Goren
Affiliation:
Department of Physics, Ben-Gurion University of the Negev, Beersheba, 84105 ISRAEL
S. Shtutina
Affiliation:
Department of Physics, Ben-Gurion University of the Negev, Beersheba, 84105 ISRAEL
A. Shames
Affiliation:
Department of Physics, Ben-Gurion University of the Negev, Beersheba, 84105 ISRAEL
B. Mishori
Affiliation:
Department of Physical Electronics, Tel-Aviv University, Ramat-Aviv, 69978 ISRAEL
Yoram Shapira
Affiliation:
Department of Physical Electronics, Tel-Aviv University, Ramat-Aviv, 69978 ISRAEL
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Abstract

The crystalline structure, Electron Paramagnetic Resonance and Surface Photovoltage (SPV) spectra of C60 thin films and the photovoltaic properties of C60/Ag and C60/Si interfaces are reported. The SPV spectra of C60 films, C60/Ag and C60/Si interfaces are presented and analyzed on the basis of a model of C60 film electron structure including mobility gap, band tails extending into the gap and two deep level states in the gap. I-V characteristics of the C60/Ag and the C60/P-Si interfaces were measured. Both device structures are shown to exhibit rectifying behavior in the dark and photovoltaic properties. The solar cell parameters are presented.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 485: Symposium G – Thin Film Structures for Photovoltaics , 1997 , 113
Copyright
Copyright © Materials Research Society 1998

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