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Photovoltaic Effect in a-Si/c-Si Heterostructure Prepared by RF Magnetron Sputtering Technique

Published online by Cambridge University Press:  10 February 2011

B. G. Budaguan ,
A. A. Sherchenkov  and
A. A. Aivazov
B. G. Budaguan
Affiliation:
Department of Microtechnology, Institute of Electronic Technology, 103498 Moscow, Russia
A. A. Sherchenkov
Affiliation:
Department of Microtechnology, Institute of Electronic Technology, 103498 Moscow, Russia
A. A. Aivazov
Affiliation:
Department of Microtechnology, Institute of Electronic Technology, 103498 Moscow, Russia
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Abstract

Photosensitivity spectral dependencies of the a-Si(n-type)/c-Si(p-type) heterostructure for the different reverse biases, Vb, amorphous Si film thickness, substrate predeposition temperatures, Ts, and annealing conditions, Ta, were investigated in the wavelengths range of 500–1200 nm It was found that the position of the relative photosensitivity maximum depends on Ts, and Vb and can be varied in the wavelengths range of 840–1080 nm. The energy band diagram of the heterostructure was analyzed to explain the observed results. It was shown that the photosensitivity properties of the a-Si/c-Si heterostructure depend on the interfacial condition. The perspective application of the structures investigated is IR detector fabrication.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 426: Symposium J – Thin Films for Photovoltaic and Related Device , 1996 , 65
Copyright
Copyright © Materials Research Society 1996

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