Electric field – induced effects are studied in thin films of amorphous Si grown by magnetron sputtering performed in continuous and pulse modes. Current-voltage characteristics are measured under the room temperature in different spectral ranges. It is shown that the investigated dependencies are of exponential character in all range of applied bias. Good photosensitivity was revealed by the samples prepared in continuous mode in the near-IR and visible interval. The samples grown by the pulse magnetron technology were shown room-temperature photosensitivity in near-IR range after 2000C hydrogenation.