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Photoresponse Of Organic Field-Effect Transistors Based On Soluble Semiconductors And Dielectrics

Published online by Cambridge University Press:  01 February 2011

Nenad Marjanović ,
Th. B. Singh ,
Serap Günes ,
Helmut Neugebauer  and
Niyazi Serdar Sariciftci
Nenad Marjanović
Affiliation:
Linz Institute for Organic Solar Cells (LIOS), Physical Chemistry, Johannes Kepler University Linz, Altenbergerstrasse 69, A-4040 Linz, Austria
Th. B. Singh
Affiliation:
Linz Institute for Organic Solar Cells (LIOS), Physical Chemistry, Johannes Kepler University Linz, Altenbergerstrasse 69, A-4040 Linz, Austria
Serap Günes
Affiliation:
Linz Institute for Organic Solar Cells (LIOS), Physical Chemistry, Johannes Kepler University Linz, Altenbergerstrasse 69, A-4040 Linz, Austria
Helmut Neugebauer
Affiliation:
Linz Institute for Organic Solar Cells (LIOS), Physical Chemistry, Johannes Kepler University Linz, Altenbergerstrasse 69, A-4040 Linz, Austria
Niyazi Serdar Sariciftci
Affiliation:
Linz Institute for Organic Solar Cells (LIOS), Physical Chemistry, Johannes Kepler University Linz, Altenbergerstrasse 69, A-4040 Linz, Austria
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Abstract

Photoactive organic field-effect transistors, photOFETs, based on a conjugated polymer/fullerene blend, MDMO-PPV: PCBM (1:4), and polymeric dielectrics as polyvinylalcohol (PVA) or divinyltetramethyldisiloxane-bis(benzocyclobutene) (BCB) with top source and drain electrodes were fabricated and characterized in dark and under AM1.5 illumination. With LiF/Al as top source and drain contacts the devices feature n-type transistor behavior in dark with electron mobility of 10-2 cm2/Vs. Under illumination, a large free carrier concentration from photo-induced charge transfer at the polymer/fullerene bulk heterojunction (photodoping) is created. The device performance was studied with different illumination intensities and showed to be strongly influenced by the nature of the organic dielectric/organic semiconductor interface resulting in phototransistor behavior in BCB-based photOFETs and in phototransistor or photoresistor behavior for PVA-based photOFETs.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 871: Symposium I – Organic Thin-Film Electronics , 2005 , I6.50
Copyright
Copyright © Materials Research Society 2005

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