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Photoreflectance Study of MBE Grown Te-doped GaSb at the E0+Δ0 Transition

Published online by Cambridge University Press:  10 February 2011

S. Iyer ,
S. Mulugeta ,
J. Li ,
B. Mangalam ,
S. Venkatraman  and
K. K. Bajaj
S. Iyer
Affiliation:
Department of Electrical Engineering, North Carolina A & T State University, Greensboro, NC 27411
S. Mulugeta
Affiliation:
Department of Electrical Engineering, North Carolina A & T State University, Greensboro, NC 27411
J. Li
Affiliation:
Department of Electrical Engineering, North Carolina A & T State University, Greensboro, NC 27411
B. Mangalam
Affiliation:
Department of Electrical Engineering, North Carolina A & T State University, Greensboro, NC 27411
S. Venkatraman
Affiliation:
Department of Electrical Engineering, North Carolina A & T State University, Greensboro, NC 27411
K. K. Bajaj
Affiliation:
Department of Physics, Emory University, Atlanta, GA 30322
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Abstract

Photoreflectance (PR) measurements have been performed on MBE grown GaSb samples at the E0+Δ0 transition. The transition energy has been measured from 4 to 300 K in the 1.35 to 1.8 eV energy region. Transition energy of 1.614 eV and broadening of 53 meV have been obtained at 4 K from a representative Te-doped sample while no PR signals were obtained from undoped samples. The logarithmic dependence of the PR amplitude and invariance of the line shape on the modulating pump intensity, and absence of Franz-Keldysh oscillations are typical of the PR spectra in the low-field regime. Good fits were obtained using line shape analysis of the PR spectra and the temperature dependence of the transition energy and broadening have been determined.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 484: Symposium F – Infrared Applications of Semiconductors II , 1997 , 57
Copyright
Copyright © Materials Research Society 1998

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