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Photoreflectance of a GaAs/In0.5 Ga0.5 P (ordered) Single Quantum Well Grown by Atomic Layer Epitaxy
Published online by Cambridge University Press: 28 February 2011
Abstract
We have studied the photoreflectance spectrum at 300K from a GaAs/In0.5 Ga0.5p (ordered) single quantum well fabricated by atomic layer epitaxy. Comparison of the energies of the observed intersubband and barrier transitions with an envelope function model calculation yields a valence band offset of 350 ± 20 meV.
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- Copyright © Materials Research Society 1990
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