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Photon-Induced Adhesion and Chemical Changes in Aluminium Films on Silicon.

Published online by Cambridge University Press:  28 February 2011

Andrew J. Kellock ,
J. Liesegang ,
G. L. Nyberg  and
J. S. Williams
Andrew J. Kellock
Affiliation:
Microelectronics Technology Centre, RMIT, Melbourne 3000, Australia. LaTrobe University, Bundoora 3083, Australia.
J. Liesegang
Affiliation:
LaTrobe University, Bundoora 3083, Australia.
G. L. Nyberg
Affiliation:
LaTrobe University, Bundoora 3083, Australia.
J. S. Williams
Affiliation:
Microelectronics Technology Centre, RMIT, Melbourne 3000, Australia.
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Abstract

In the present study, thin layers of Al (<500 Å), deposited on Si under varying vacuum and substrate-cleaning conditions, have been irradiated with various wavelength photons. The films and interfacial oxide layers have been analysed with Rutherford backscattering and channeling (RBS-C), X-ray photoelectron spectroscopy (XPS) and transmission electron microscopy (TEM) techniques both before and after irradiation. Results indicate that substantial oxygen uptake, indiffusion and interface reaction can take place in some thin Al films during photon irradiation at room temperature. Such photon-induced chemical changes correlate with an increase in film adhesion.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 75: Symposium B – Photon, Beam, and Plasma Stimulated Chemical Processes at Surfaces , 1986 , 179
Copyright
Copyright © Materials Research Society 1987

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References

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