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Photoluminescence variation in InAs Quantum dots embedded in InGaAs/AlGaAs Quantum wells at thermal annealing

Published online by Cambridge University Press:  12 March 2013

I. J. Guerrero Moreno
Affiliation:
ESIME– Instituto Politécnico Nacional, México D. F. 07738, México
G. Polupan
Affiliation:
ESIME– Instituto Politécnico Nacional, México D. F. 07738, México
J.L. Casas Espinola
Affiliation:
ESFM– Instituto Politécnico Nacional, México D. F. 07738, México
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Abstract

Papers in the Appendix were published in electronic format as Volume 1534

Type
Articles
Copyright
Copyright © Materials Research Society 2013 

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References

REFERENCES

Bimberg, D., Grundman, M., Ledentsov, N. N., Quantum Dot Heterostructures, Ed. Wiley & Sons (2001) 328.Google Scholar
Ustinov, V. M., Maleev, N. A., Shukov, A. E., Kovsh, A. R., Egorov, A. Yu., Lunev, A. V., Volovik, B. V., Krestnikov, I. L., Musikhin, Yu. G., Bert, N. A., Kopev, P. S., Alferov, Zh.I., Ledentsov, N. N., Bimberg, D., Appl.Phys.Lett. 74, 2815 (1999).CrossRefGoogle Scholar
Liu, G. T., Stintz, A., Li, H., Malloy, K. J. and Lester, L. F., Electron Lett, 35, 1163 (1999).CrossRefGoogle Scholar
Stintz, A., Liu, G. T., Gray, L., Spillers, R., Delgado, S. M., Malloy, K. J., J. Vac. Sci.Technol. B. 18(3), 1496 (2000).CrossRefGoogle Scholar
Dybiec, M., Ostapenko, S., Torchynska, T. V., Losada, E.Velasquez, Appl. Phy. Lett..84, 51655167 (2004).CrossRefGoogle Scholar
Dybiec, M., Borkovska, L., Ostapenko, S., Torchynska, T. V., Espinola, J. L. Casas, Stintz, A. and Malloy, K. J., Applid. Surface Science, 252, 55425545(2006)CrossRefGoogle Scholar
Torchynska, T.V., Cano, A. Diaz, Dybic, M., Ostapenko, S., Mynbaeva, M., Physica B, Conden. Matter 376-377, 367369 (2006).CrossRefGoogle Scholar
Torchynska, T.V., Dybiec, M., Ostapenko, S., Phys. Rev. B. (USA) 72, 195341 (2005)CrossRefGoogle Scholar
Torchinskaya, T.V., Opto-ElectronicsReview, 6(2), 121130(1998).Google Scholar
Kapteyn, C. M. A., Lion, M., Heitz, R., and Bimberg, D., Brunkov, P. N., Volovik, B. V., Konnikov, S. G., Kovsh, A. R., and Ustinov, V. M., Appl. Phys. Lett. 76, 1573 (2000)CrossRefGoogle Scholar
Duarte, C. A., da Silva, E. C. F., Quivy, A. A., da Silva, M. J., Martini, S., Leite, J. R. Meneses, E. A. and Lauretto, E., J. Appl. Phys., 93, 6279 (2003).CrossRefGoogle Scholar
Meng, X.Q., Xu, B., Jin, P., Ye, X.L., Zhang, Z.Y., Li, C.M., Wang, Z.G., Journal of Crystal Growth 243, 432 (2002).CrossRefGoogle Scholar
Seravalli, L., Frigeri, P., Minelli, M., Allegri, P., Avanzini, V., Franchi, S., Appl. Phys. Lett. 87, 063101 (2005).CrossRefGoogle Scholar
Torchynska, T., J. Appl. Phys., 104, 074315, n.7 (2008).CrossRefGoogle Scholar
Torchynska, T.V., Stintz, A., J. Appl. Phys. 108, 2, 024316 (2010).Google Scholar
Varshni, Y. P., Physica 34, 149 (1967).CrossRefGoogle Scholar