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Photoluminescence Study of Hydrogen-Related Defects in Silicon

Published online by Cambridge University Press:  22 February 2011

A. Henry ,
B. Monemar ,
J.L. LindstrÖm ,
Y. Zhang  and
J.W. Corbett
A. Henry
Affiliation:
Department of Physics and Measurement Technology, Linköping University, S-581 83 Linköping, SWEDEN
B. Monemar
Affiliation:
Department of Physics and Measurement Technology, Linköping University, S-581 83 Linköping, SWEDEN
J.L. LindstrÖm
Affiliation:
Department of Physics and Measurement Technology, Linköping University, S-581 83 Linköping, SWEDEN
Y. Zhang
Affiliation:
Department of Physics, State University of New York, Albany, NY 12222, USA
J.W. Corbett
Affiliation:
Department of Physics, State University of New York, Albany, NY 12222, USA
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Abstract

The effect of ion-implantation followed by a rapid thermal annealing was investigated in borondoped silicon using photoluminescence (PL) spectroscopy. The radiation induced defects giving rise to the G, W and C PL lines are completely passivated by a hydrogen plasma treatment. However this hydrogen exposure also introduces broad and deep luminescence structure as well as new sharp PL lines very near the silicon band gap. Up to twelve new lines are observed at low temperature (< 20K). One of them exhibits a very low exciton localisation energy (≈ 2 meV) compared to the value measured for classical shallow donors or acceptors, and is observed only at very low temperature (≈4K). A broad deep PL band with a halfwidth of 30 meV is observed at around 925 meV. The excitation power dependence and the temperature dependence of the PL intensity of these sharp lines and the broad band are presented. Tentative correlations with the data currently available in the literature are presented for the understanding of the formation of the defects associated to the broad band as well as the sharp near band gap PL lines.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 324: Symposium K – Diagnostic Techniques for Semiconductor Materials Processing , 1993 , 261
Copyright
Copyright © Materials Research Society 1994

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References

1. Pearton, S.J., Corbett, J.W. and Shi, T.S., Appl. Phys. A 43, 153 (1987).Google Scholar
2. Johnson, N.M., Ponce, F.A., Street, R.A. and Nemanich, R.J., Phys. Rev. B 35, 4166 (1987).CrossRefGoogle Scholar
3. Singh, M., Weber, J., Zundel, T., Konuma, M. and Cerva, H., Mater. Sci. Forum 38–41, 1033 (1989).Google Scholar
4. Wu, I.-W., Street, R.A. and Mikkelsen, J.C. Jr, J. Appl. Phys. 63, 1628 (1988).Google Scholar
5. Henry, A., Monemar, B., Lindstrim, J.L., Bestwick, T.D. and Oehrlein, G.S., J. Appl. Phys. 70, 5597 (1991).CrossRefGoogle Scholar
6. Weman, H., Monemar, B., Oehrlein, G.S. and Jeng, S.J., Phys. Rev. B 42, 3109 (1990).Google Scholar
7. Obodnikov, V.I., Safronov, L.N., and Smirnov, L.S., Fiz. Tekh. Poluprovodn. 10, 1373 (1976) [Sov. Phys. Semicond. 10, 814 (1976)].Google Scholar
8. Hartung, J. and Weber, J., Mater. Sci. Eng. B4, 47 (1990).Google Scholar
9. Safonov, A.N. and Lightowlers, E.C., in Proceedings of 17th International Conference on Defects in Semiconductors, Gmunden, 1993.Google Scholar
10. Henry, A., Monemar, B., Bergman, J.P., Lindstrim, J.L., Holtz, P.O., Zhang, Y. and Corbett, J.W., Phys. Rev. B 47, 13 309 (1993).Google Scholar
11. Davies, G., Rep. Phys. 176, 83 (1989) and references therein.Google Scholar