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Photoluminescence Studies on Cu and O Defects in Crystalline and Thin-film CdTe

Published online by Cambridge University Press:  01 February 2011

Caroline R. Corwine ,
Timothy A. Gessert ,
James R. Sites ,
Wyatt K. Metzger ,
Pat Dippo ,
Jingbo Li ,
Anna Duda  and
Glenn Teeter
Caroline R. Corwine
Affiliation:
Colorado State University, Fort Collins, CO 80523
Timothy A. Gessert
Affiliation:
National Renewable Energy Laboratory, Golden, CO 80401
James R. Sites
Affiliation:
Colorado State University, Fort Collins, CO 80523
Wyatt K. Metzger
Affiliation:
National Renewable Energy Laboratory, Golden, CO 80401
Pat Dippo
Affiliation:
National Renewable Energy Laboratory, Golden, CO 80401
Jingbo Li
Affiliation:
National Renewable Energy Laboratory, Golden, CO 80401
Anna Duda
Affiliation:
National Renewable Energy Laboratory, Golden, CO 80401
Glenn Teeter
Affiliation:
National Renewable Energy Laboratory, Golden, CO 80401
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Abstract

Polycrystalline thin-film CdTe is one of the leading materials used in photovoltaic solar cells. One way to improve device performance and stability is through understanding how various process steps alter defect states in the CdTe layer. Low-temperature photoluminescence (PL) studies show a 1.456-eV PL peak in single-crystal CdTe that is likely due to a Cui-OTe defect complex. A similar peak, observed in as-deposited glass/SnO2:F/CdS/CdTe thin-film structures, strongly suggests a common origin. The 1.456-eV peak is also seen in a thin-film sample after performing the CdCl2 treatment needed for high efficiencies.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 865: Symposium F – Thin-Film Compound Semiconductor Photovoltaics , 2005 , F5.24
Copyright
Copyright © Materials Research Society 2005

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