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Photoluminescence, Reflectance, and Magnetospectroscopy of Shallow Excitons in GaN

Published online by Cambridge University Press:  10 February 2011

B. J. Skromme ,
H. Zhao ,
B. Goldenberg ,
H. S. Kong ,
M. T. Leonard ,
G. E. Bulman ,
C. R. Abernathy  and
S. J. Pearton
B. J. Skromme
Affiliation:
Department of Electrical Engineering and Center for Solid State Electronics Research, Arizona State University, Tempe, AZ 85287-5706, [email protected]
H. Zhao
Affiliation:
Department of Electrical Engineering and Center for Solid State Electronics Research, Arizona State University, Tempe, AZ 85287-5706, [email protected]
B. Goldenberg
Affiliation:
Honeywell Technology Center, Plymouth, MN 55420
H. S. Kong
Affiliation:
Cree Research, Inc., Durham, NC22713
M. T. Leonard
Affiliation:
Cree Research, Inc., Durham, NC22713
G. E. Bulman
Affiliation:
Cree Research, Inc., Durham, NC22713
C. R. Abernathy
Affiliation:
Department of Materials Science and Engineering, University of Florida, Gainesville, FL 32611
S. J. Pearton
Affiliation:
Department of Materials Science and Engineering, University of Florida, Gainesville, FL 32611
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Abstract

We report several new aspects of the excitonic properties of heteroepitaxial GaN grown on sapphire or 6H-SiC. In particular, we observed the n = 2 free exciton associated with both A and B excitons (which are distinct from the n = 1 C exciton) using reflectance and 1.7 K photoluminescence. We also studied the behavior of the n = 2 A-exciton using magnetoluminescence in fields up to 12 T. The large diamagnetic shift and splitting positively confirm the identification, yielding an exciton binding energy of about 26.4 meV. Several previous identifications of the n = 2 free exciton yielding a smaller exciton binding energy are probably in error, based on our results. We have also detected the two-electron replica of the neutral donor-bound exciton for the first time in GaN and observed its splitting pattern in magnetic fields up to 12 T. This feature is 22 meV below the principal neutral donor-bound exciton peak, independently of strain shifts in the overall spectrum. It yields a precise donor binding energy of 29 meV for the shallow residual donor in material grown by metalorganic chemical vapor deposition and gas-source molecular beam epitaxy, considerably smaller than that of the residual donor reported earlier in hydride vapor phase epitaxial material (about 35.5 meV).

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 449: Symposium N – III-V Nitrides , 1996 , 713
Copyright
Copyright © Materials Research Society 1997

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References

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