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Photoluminescence, Raman Scattering and Rbs/Channeling of Epitaxial Fluorides

Published online by Cambridge University Press:  28 February 2011

W.J. Choyke ,
J.L. Bradshaw ,
A. Mascarenhas ,
Z.C. Feng ,
S. Sinharoy  and
R.A. Hoffman
W.J. Choyke
Affiliation:
Department of Physics and Astronomy, University of Pittsburgh, Pittsburgh, PA 15260 Westinghouse R&D Center, Pittsburgh, PA 15235
J.L. Bradshaw
Affiliation:
Department of Physics and Astronomy, University of Pittsburgh, Pittsburgh, PA 15260
A. Mascarenhas
Affiliation:
Department of Physics and Astronomy, University of Pittsburgh, Pittsburgh, PA 15260
Z.C. Feng
Affiliation:
Department of Physics and Astronomy, University of Pittsburgh, Pittsburgh, PA 15260
S. Sinharoy
Affiliation:
Westinghouse R&D Center, Pittsburgh, PA 15235
R.A. Hoffman
Affiliation:
Westinghouse R&D Center, Pittsburgh, PA 15235 ALCOA Technical Center, ALCOA Center, PA 15069
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Abstract

Growth conditions are described for producing high quality crystalline films of CaF2 on (100) and (111) GaAs and LaF3, CeF3 and NdF3 on (111) Si. Rutherford backscattering/channeling, low temperature (<2K) photolumin-escence and Raman scattering are used as diagnostic techniques to probe the crystalline quality of the films and the stress/disorder induced at the film-substrate interface due to lattice mismatch.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 60: Symposium L – Defect Properties and Processing of High-Technology Nonmetallic Materials , 1985 , 355
Copyright
Copyright © Materials Research Society 1986

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