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Photoluminescence Properties of Er-Doped Porous Silicon

Published online by Cambridge University Press:  15 February 2011

U. Hömmerich ,
X. Wu ,
F. Namavar ,
A. M. Cremins-Costa  and
K. L. Bray
U. Hömmerich
Affiliation:
Hampton University, Research Center for Optical Physics, Hampton, VA 23668
X. Wu
Affiliation:
Hampton University, Research Center for Optical Physics, Hampton, VA 23668
F. Namavar
Affiliation:
Spire Corporation, One Patriots Park, Bedford, MA 01876
A. M. Cremins-Costa
Affiliation:
Spire Corporation, One Patriots Park, Bedford, MA 01876
K. L. Bray
Affiliation:
University of Wisconsin-Madison, Department of Chemical Engineering, 1415 Johnson Drive, Madison, WI 53706
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Abstract

We present a photoluminescence study of erbium implanted into porous silicon (Er:PSi) with two different Si porosities, a) Er:PSi with a purple appearance and b) with a green-yellow appearance. Er was implanted with a dose of 1×1015 Er/cm2 at 380 keV and annealed at 650°C for 30 minutes. Room-temperature 1.54μm Er3+ emission was observed from both samples. The emission from purple Er:PSi was four times stronger than that from green-yellow Er:PSi. In contrast, visible luminescence from green-yellow Er:PSi was found to be stronger than that from purple Er:PSi. Temperature quenching and power dependence was investigated to elucidate the excitation mechanisms of Er3+ in porous silicon. The results support a correlation between nanostructures of porous Si and 1.54 μm Er3+ luminescence.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 405: Symposium K – Surface/Interface and Stress Effects in Electronic Materials Nanostructures , 1995 , 215
Copyright
Copyright © Materials Research Society 1996

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