Hostname: page-component-cd9895bd7-jkksz Total loading time: 0 Render date: 2024-12-27T02:14:43.160Z Has data issue: false hasContentIssue false
  • English
  • Français

Photoluminescence of Surface Modified Silicon Carbide Nanowires

Published online by Cambridge University Press:  12 July 2011

Polite D. Stewart ,
Ryan Rich ,
A. Nemashkalo  and
T. W. Zerda
Polite D. Stewart
Affiliation:
Physics Department, Texas Christian University, Fort Worth, TX 76129 USA Southern University, Baton Rouge, LA 70813, USA
Ryan Rich
Affiliation:
Physics Department, Texas Christian University, Fort Worth, TX 76129 USA
A. Nemashkalo
Affiliation:
Physics Department, Texas Christian University, Fort Worth, TX 76129 USA
T. W. Zerda
Affiliation:
Physics Department, Texas Christian University, Fort Worth, TX 76129 USA
Get access

Abstract

SiC nanowires were produced from carbon nanotubes and nanosize silicon powder in a tube furnace at temperatures between 1100°C and 1350°C. SiC nanowires had average diameter of 30 nm and very narrow size distribution. The surface of the SiC nanowires is covered by an amorphous layer composed of amorphous SiC and various carbon and silicon compounds. The objective of the research was to modify the surface structure of the SiC nanowires, a step necessary for future surface functionalization. The acid etched nanowires were analyzed using FTIR, TEM, x-ray diffraction, and photoluminescence. The concentration of Si-Ox groups in untreated specimens was estimated to account for 1% of the total mass of a 2 nm thick amorphous layer wrapping around all structures. After treatment in HF this concentration was negligibly small. TEM images show that after treatment the amorphous layer was removed but the diameter of the core remained unchanged. The surface was roughened and multiple pits formed on that surface. X-ray line broadening analysis indicates a significant contribution due to stress caused by dislocations and planar faults. After acid etching line narrowing was observed and attributed to stress reduction and elimination of the smallest wires. The photoluminescence signal from as received samples was very weak but increased greatly after acid treatment, indicating that the signal is related to surface defects. Measurements at low temperatures, 8 K, showed peaks due to point and planar defects.

Keywords

transmission electron microscopy (TEM)luminescencenanostructure
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1350: Symposium EE – Semiconductor Nanowires—From Fundamentals to Applications , 2011 , mrss11-1350-ee03-03
Copyright
Copyright © Materials Research Society 2011

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Cui, Y. and Lieber, C.M., Science, 291, 851 (2001).Google Scholar
2. Seong, H. K., Choi, H. J., Lee, S. K., Lee, J. I., Choi, D. J., Appl. Phys. Lett. 85, 1256 (2004).Google Scholar
3. Rich, R., Stelmakh, S., Patyk, J., Wieligor, M., Zerda, T. W., Mater, J.. Sci. 44, 3010 (2009).Google Scholar
4. Zhao, Y., Qian, J., Daemen, L. L., Pantea, C., Zhang, J., Voronin, G.A., Zerda, T.W., Appl. Phys. Lett. 84, 1356 (2004).Google Scholar
5. Yang, W., Araki, H., Tang, C. C., Thaveethavorn, S., Kohyama, A., Suzuki, H., Noda, T., Adv. Mater. 17, 1519 (2005).Google Scholar
6. Wang, Y., Voronin, G.A., Zerda, T.W., Winiarski, A., J. Phys.: Condens. Matter. 18, 275 (2006).Google Scholar
7. Rich, R., Wieligor, M., Zerda, T.W., in Silicon Carbide: New Materials, Production Methods and Application, edited by Vanger, Sofia H.(NOVA Publishers, New York, 2011) chapter 3.Google Scholar
8. Cao, G., Nanostructures and Nanomaterials (Imperial College Press: London, 2008) pp 110-168.Google Scholar
9. Wieligor, M., Wang, Y., Zerda, T.W., J. Phys.: Condens. Matter. 17, 2387 (2005).Google Scholar
10. Wieligor, M., Rich, R., Zerda, T.W., Mater, J.. Sci. 45, 1725 (2010).Google Scholar
11. Choyke, W.J., Feng, Z.C., Powell, J.A., Appl, J.. Phys. 64, 3163 (1988).Google Scholar
12. Shim, H.W., Kim, K.C., Seo, Y.H., Nahm, K.S., Suh, E.K., Lee, H.J., Hwang, Y.G., Appl. Phys. Lett. 70, 1757 (1997)Google Scholar
13. Fan, J.Y., Wu, X.L., Kong, F., Qiu, T., Huang, S., Appl. Phys. Lett. 86, 171903 (2005)Google Scholar