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Photoluminescence of Si/SiO2, RE2O3/Si/SiO2 and RE2O3/Si/Al2O3 (RE = Er, Nd, Tm) Sputtered Thin Films

Published online by Cambridge University Press:  01 February 2011

C. Rozo ,
L. F. Fonseca ,
O. Resto  and
S. Z. Weisz
C. Rozo
Affiliation:
Physics Department, University of Puerto Rico at Rio Piedras, San Juan, PR, USA
L. F. Fonseca
Affiliation:
Physics Department, University of Puerto Rico at Rio Piedras, San Juan, PR, USA
O. Resto
Affiliation:
Physics Department, University of Puerto Rico at Rio Piedras, San Juan, PR, USA
S. Z. Weisz
Affiliation:
Physics Department, University of Puerto Rico at Rio Piedras, San Juan, PR, USA
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Abstract

Si/SiO2, RE2O3/Si/SiO2 and RE2O3/Si/Al2O3 films were sputtered. Si/SiO2 films were annealed to 1100°C for 30 min in Ar. RE2O3/Si/SiO2 films were annealed to 700°C, 1000°C, or 1100°C for 30 min in Ar. RE2O3/Si/Al2O3 films were annealed to 700°C for 30 min in Ar. Raman spectra and photoluminescence (PL) obtained for the Si/SiO2 films show relation between Si nanocrystal (nc) presence, Si nanoparticle (np) PL and Si target area. Nd2O3 co-sputtered films presented PL for the (4F5/2, 2H9/2) → 4I9/2, 4F3/2 → 4I9/2, 4F3/2 → 4I11/2, and 4F3/2 → 4I13/2 transitions. Er2O3 co-sputtered films presented PL for the 4I11/2 → 4I15/2, and 4I13/2 → 4I15/2 transitions. Tm2O3 co-sputtered films presented PL for the 3H4 → 3H6 transition. Different spectral shapes were observed for the infrared (IR) PL of the Er3+ ions and of the Nd3+ ions for the RE2O3/Si/Al2O3 films with respect to the RE2O3/Si/SiO2 films.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 788: Symposium L – Continuous Nanophase and Nanostructured Materials , 2003 , L3.2
Copyright
Copyright © Materials Research Society 2004

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References

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