Hostname: page-component-cd9895bd7-jkksz Total loading time: 0 Render date: 2024-12-27T02:04:58.480Z Has data issue: false hasContentIssue false
  • English
  • Français

Photoluminescence of Eu-doped GaN

Published online by Cambridge University Press:  30 June 2011

K.P. O’Donnell
K.P. O’Donnell*
Affiliation:
SUPA Dept. of Physics, University of Strathclyde, Glasgow G4 0NG, UK
Get access

Abstract

This talk reviews work on the optical properties of Eu-doped GaN at the Semiconductor Spectroscopy laboratory of the University of Strathclyde. The principal experimental technique used has been lamp-based Photoluminescence/Excitation (PL/E) spectroscopy on samples produced mainly by high-energy ion implantation and annealing, either at low or high pressures of nitrogen, as described by Lorenz et al. [1]. These have been supplemented by samples doped in-situ either by Molecular Beam Epitaxy or Metallorganic Vapour Phase Epitaxy. Magneto-optic experiments on GaN:Eu were carried out in collaboration with the University of Bath.

Keywords

nitrideEuoptical properties
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1342: Symposium V – Rare-Earth Doping of Advanced Materials for Photonic Applications , 2011 , mrss11-1342-v05-04
Copyright
Copyright © Materials Research Society 2011

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

[1] Lorenz, K, Alves, E, Gloux, F, Ruterana, P in Rare-Earth Doped III-Nitrides for Optoelectronic and Spintronic Applications (O’Donnell, Kevin and Dierolf, Volkmar, Eds; Springer, 2010), Ch2 Google Scholar
[2] Nishikawa, Atsushi, Kawasaki, Takashi, Furukawa, Naoki, Terai, Yoshikazu, and Fujiwara, Yasufumi, Applied Physics Express 2 (2009) 071004 Google Scholar
[3] Judd, B R, Phys. Rev. 127, 750 (1962); G S Ofelt, J. Chem. Phys. 37, 520(1962) Google Scholar
[4] Martin, R W in Rare-Earth Doped III-Nitrides for Optoelectronic and Spintronic Applications (O’Donnell, Kevin and Dierolf, Volkmar, Eds; Springer, 2010), Ch7 and refs therein Google Scholar
[5] O’Donnell, K.P. et al. ., Opt. Mater. (2010), doi:10.1016/j.optmat.2010.07.002Google Scholar
[6] Lorenz, K, Alves, E, Roqan, I. S, O’Donnell, K. P, Nishikawa, A, Fujiwara, Y., Bockowski, M, Appl. Phys Lett., 97, 111911 (2010)Google Scholar
[7] Roqan, I. S, O’Donnell, K. P., Martin, R. W, Edwards, P. R, Song, S. F, Vantomme, A, Lorenz, K, Alves, E, Bockowski, M, Phys. Rev. B81, 085209 (2010)Google Scholar
[8] Kachkanov, V., O’Donnell, K.P., Rice, C., Wolverson, D., Martin, R.W., Lorenz, K., Alves, E., Bockowski, M., MRS Fall Meeting 2010, to be published.Google Scholar