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Photoluminescence of Erbium-Diffused Silicon

Published online by Cambridge University Press:  10 February 2011

H. Horiguchi ,
T. Kinone ,
R. Saito ,
T. Kimura  and
T. Ikoma
H. Horiguchi
Affiliation:
University of Electro-Communications, Department of Electronic Engineering, Chofugaoka 1-5-1, Chofu, Tokyo 182, Japan
T. Kinone
Affiliation:
University of Electro-Communications, Department of Electronic Engineering, Chofugaoka 1-5-1, Chofu, Tokyo 182, Japan
R. Saito
Affiliation:
University of Electro-Communications, Department of Electronic Engineering, Chofugaoka 1-5-1, Chofu, Tokyo 182, Japan
T. Kimura
Affiliation:
University of Electro-Communications, Department of Electronic Engineering, Chofugaoka 1-5-1, Chofu, Tokyo 182, Japan
T. Ikoma
Affiliation:
TI Tsukuba Research and Development Center Ltd., Tsukuba, Ibaragi, Japan
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Abstract

Erbium films are evaporated on crystalline silicon substrates and are thermally diffused into silicon in an Ar+02 or H2 flow. Very sharp Er3+-related luminescence peaks are observed around 1.54 μ m.The main peak as well as the fine structures of the luminescence spectra depend on the annealing atmosphere, suggesting different luminescence centers. The full width at half maximum (FWHM) of the main peaks is ≤ 0.5nm at 20K. Thermal diffusion with Al films on top of the Er films is found to increase the intensity of the Er3+-related peaks greatly. The temperature dependence between 20 K and room temperature is relatively small, and a strong luminescence is obtained at room temperature.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 422: Symposium D – Rare-Earth Doped Semiconductors II , 1996 , 81
Copyright
Copyright © Materials Research Society 1996

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