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Photoluminescence of Chemically Etched Polycrystalline and Amorphous Si Thin Films

Published online by Cambridge University Press:  25 February 2011

A. J. Steckl ,
J. Xu  and
H. C. Mogul
A. J. Steckl
Affiliation:
Nanoelectronics Laboratory, Department of Electrical and Computer Engineering, University of Cincinnati, Cincinnati, OH 45221-0030
J. Xu
Affiliation:
Nanoelectronics Laboratory, Department of Electrical and Computer Engineering, University of Cincinnati, Cincinnati, OH 45221-0030
H. C. Mogul
Affiliation:
Nanoelectronics Laboratory, Department of Electrical and Computer Engineering, University of Cincinnati, Cincinnati, OH 45221-0030
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Abstract

Si thin films were deposited on quartz at temperatures ( TD ) ranging from 540 to 640°C. X-ray diffraction indicates that films deposited at TD < 580°C are amorphous, while those deposited above 600°C are poly-crystalline with a <220> texture. The Si films were made porous by stain-etching in HF:HNO3:H2O. Only Si films deposited at 590°C and above show photoluminescence (PL), centered at ∼650-670 nm under UV excitation. Films deposited at TD < 580°C do not luminesce even after very long etch times, which produce a highly porous structure. The PL intensity and the x-ray signal follow a very similar trend with TD. It appears that a minimum level of crystallinity is required for photoemission in porous Si and that a strong relationship exists between them.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 298: Symposium B – Silicon-Based Optoelectronic Materials , 1993 , 211
Copyright
Copyright © Materials Research Society 1993

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