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Photoluminescence Investigation of Surface Oxidation of C0.9Zn0.1 Te Detectors

Published online by Cambridge University Press:  10 February 2011

H. Chen ,
M. Hayes ,
K. Chattopadhyay ,
K. T. Chen ,
A. Burger ,
J. Heffelfinger  and
R. B. James
H. Chen
Affiliation:
Center for Photonic Materials and Devices, Department of Physics, Fisk University, Nashville, TN 37208.
M. Hayes
Affiliation:
Center for Photonic Materials and Devices, Department of Physics, Fisk University, Nashville, TN 37208.
K. Chattopadhyay
Affiliation:
Center for Photonic Materials and Devices, Department of Physics, Fisk University, Nashville, TN 37208.
K. T. Chen
Affiliation:
Center for Photonic Materials and Devices, Department of Physics, Fisk University, Nashville, TN 37208.
A. Burger
Affiliation:
Center for Photonic Materials and Devices, Department of Physics, Fisk University, Nashville, TN 37208.
J. Heffelfinger
Affiliation:
Advanced Electronics Manufacturing Technologies Department, Sandia National Laboratories, Livermore, CA 94550.
R. B. James
Affiliation:
Advanced Electronics Manufacturing Technologies Department, Sandia National Laboratories, Livermore, CA 94550.
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Abstract

The effect of surface oxidation of Cd1−xZnxTe (x = 0.1) detectors by chemical etching in hydrogen peroxide aqueous solution (H2O2) at different concentrations and etching times was investigated by low temperature photoluminescence (PL). The treatment resulted in better surface condition evidenced by the larger I(D0, X)/Idef intensity ratio and the narrower full width at half maximum of the main peak (D0, X). Peak shifts in the PL spectra associated with bound exciton lines and free to bound transition were also observed and attributed to the oxide layer. These surface effects were found to be dependent on H2O2 concentration and etching time. The significance of this surface oxidation on device passivation and the subsequent improvements in the detector performance are also discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 487: Symposium I – Semiconductors for Room-Temperature Radiation II , 1997 , 65
Copyright
Copyright © Materials Research Society 1998

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References

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