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Photoluminescence from Microcrystalline Silicon and Related Materials

Published online by Cambridge University Press:  28 February 2011

M. Rlickschloss ,
B. Landkammer ,
O. Ambacher  and
S. Vepřek
M. Rlickschloss
Affiliation:
Institute for Chemistry of Information Recording, Technical University Munich, Lichtenbergstrasse 4, D-8046 Garching/Munich, Germany
B. Landkammer
Affiliation:
Institute for Chemistry of Information Recording, Technical University Munich, Lichtenbergstrasse 4, D-8046 Garching/Munich, Germany
O. Ambacher
Affiliation:
Institute for Chemistry of Information Recording, Technical University Munich, Lichtenbergstrasse 4, D-8046 Garching/Munich, Germany
S. Vepřek*
Affiliation:
Institute for Chemistry of Information Recording, Technical University Munich, Lichtenbergstrasse 4, D-8046 Garching/Munich, Germany
*
*) Author to whom correspondence should be addressed
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Abstract

Intense photoluminescence has been obtained from nanocrystal-line silicon prepared in completely dry processing by the optimizing the crystallite size and the chemical passivation of the grain boundaries due to a controlled postoxidation of the plasma deposited films.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 283: Symposium F – Microcrystalline Semiconductors–Materials Science and Devices , 1992 , 65
Copyright
Copyright © Materials Research Society 1993

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References

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