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Photoluminescence Excitation Studies of the Optical Transitions in GaN

Published online by Cambridge University Press:  10 February 2011

D. Kovalev ,
B. Averboukh ,
B. K. Meyer ,
D. Volm ,
H. Amano  and
I. Akasaki
D. Kovalev
Affiliation:
Technische Universität München, Physik-Department E16, D-5747 Garching, Germany
B. Averboukh
Affiliation:
Technische Universität München, Physik-Department E16, D-5747 Garching, Germany
B. K. Meyer
Affiliation:
1. Physics Institute, University Giessen, Heinrich-Buff-Ring 16, D-35392 Giessen, Germany
D. Volm
Affiliation:
1. Physics Institute, University Giessen, Heinrich-Buff-Ring 16, D-35392 Giessen, Germany
H. Amano
Affiliation:
Department of Electrical and Electronical Engineering, Meiji University, 1–501 Shiogamaguchi, Tempaku-ku, Nagoya 468, Japan
I. Akasaki
Affiliation:
Department of Electrical and Electronical Engineering, Meiji University, 1–501 Shiogamaguchi, Tempaku-ku, Nagoya 468, Japan
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Abstract

We present a detailed photoluminescence excitation study of the optical transitions in GaN. This technique is employed to distinguish between band-to-band excitation and exciton contribution to the formation of the free exciton, bound exciton, violet and yellow photoluminescence bands. We show the dominant role of the Fröhlich polar intraband scattering in the formation of the free exciton states. We demonstrate that bound exciton states in a large extent are created by the capture of the free excitons by shallow impurities as well as by phononassisted resonant excitation of the bound exciton states. The capture of the free carriers excited in the band continuum is a main excitation source for the violet and yellow bands. However, distinct A- and C-exciton resonances are detected in the excitation spectra of the violet and yellow emission bands.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 449: Symposium N – III-V Nitrides , 1996 , 701
Copyright
Copyright © Materials Research Society 1997

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References

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