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Photoluminescence Excitation Spectroscopy of MOCVD-Grown: GaAs:V

Published online by Cambridge University Press:  25 February 2011

Y.J. Kao ,
N.M. Haegel  and
W.S. Hobson
Y.J. Kao
Affiliation:
Dept of Materials Science and Engineering, University of California - Los Angeles, Los Angeles, CA 90024;
N.M. Haegel
Affiliation:
Dept of Materials Science and Engineering, University of California - Los Angeles, Los Angeles, CA 90024;
W.S. Hobson
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974.
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Abstract

Photoluminescence excitation spectra have been obtained at 4.2 K for the characteristic V3+ intra-center emission (0.65 – 0.75 eV) of MOCVD-grown GaAs:V. Oscillatory structure of the PLE spectrum with above-band-edge excitation has been observed in GaAs:V for the first time. The oscillatory period is found to be 41.3 ± 0.5 meV, corresponding to , and is due to energy relaxation of conduction band electrons through LO phonon emission. Our results suggest capture by a shallow donor as an intermediate step in the luminescence from the V center.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 163: Symposium G – Impurities, Defects and Diffusion in Semiconductors: Bulk and Layered Structures , 1989 , 63
Copyright
Copyright © Materials Research Society 1990

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