Hostname: page-component-cd9895bd7-hc48f Total loading time: 0 Render date: 2024-12-27T01:58:32.439Z Has data issue: false hasContentIssue false
  • English
  • Français

Photoluminescence Characterization of Phosphorus Diffusion and Hydrogenation in Continuous Wave Diode Laser Crystallized Si Thin-Film on Glass.

Published online by Cambridge University Press:  15 April 2014

Miga Jung ,
Anthony Teal ,
Rhett Evans ,
Jae Sung Yun ,
Sergey Varlamov  and
Martin A. Green
Miga Jung
Affiliation:
University of New South Wales, Kensington, NSW, 2052, Australia.
Anthony Teal
Affiliation:
University of New South Wales, Kensington, NSW, 2052, Australia.
Rhett Evans
Affiliation:
Suntech R&D Australia Pty Ltd, 5 Parkview Drive, Homebush Bay, NSW, 2127 Australia.
Jae Sung Yun
Affiliation:
University of New South Wales, Kensington, NSW, 2052, Australia.
Sergey Varlamov
Affiliation:
University of New South Wales, Kensington, NSW, 2052, Australia.
Martin A. Green
Affiliation:
University of New South Wales, Kensington, NSW, 2052, Australia.
Get access

Abstract

In this paper, the effect of phosphorus diffusion and hydrogen passivation on the material properties of laser crystallised silicon on glass is investigated. Photoluminescence imaging, as well as Hall effect and Suns-Voc techniques are applied for the characterisation of laser crystallized silicon thin-film material properties. Hall effect as well as Suns-Voc measurements supports the photoluminescence imaging results; phosphorus diffusion and hydrogen passivation of laser crystallized films improves the overall material quality. Hydrogen passivation is more effective at improving the electronic properties of the laser crystallized films than phosphorus diffusion. Hydrogen passivated samples improved the photoluminescence intensity even further by a factor of 3. In addition, a correlation between photoluminescence intensity and open-circuit voltage is demonstrated: samples with highest photoluminescence intensity (1678 counts/s), gave the highest voltage (530 mV). Hall effect measurement shows a significant improvement in the bulk material, with carrier mobility increasing from 208 cm2/Vs to 488 cm2/Vs.

Keywords

diffusionpassivationluminescence
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1638: Symposium W – Next-Generation Inorganic Thin-Film Photovoltaics , 2014 , mrsf13-1638-w06-04
Copyright
Copyright © Materials Research Society 2014 

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

Bonne Eggleston, S.V., Huang, Jialiang, Evans, Rhett, Dore, Jonathon and Green, Martin A. (2012)., Large Grained, Low Defect Density Polycrystalline Silicon on Glass Substrates by Large-area Diode Laser Crystallisation.. MRS Proceedings, 2012(1426): p. pp 251–256.Google Scholar
Phang, S.P. and Macdonald, D.. Boron, phosphorus and aluminum gettering of iron in crystalline silicon: Experiments and modelling. in Photovoltaic Specialists Conference (PVSC), 2010 35th IEEE. 2010.Google Scholar
Keevers, M.J.T., A.; Clugston, D.; Dore, J.; Young, T.; Schubert, U.; Basore, P. A., Remarkably Effective Hydrogenation of Crystalline Silicon on Glass Modules. EUROPEAN PHOTOVOLTAIC SOLAR ENERGY CONFERENCE PROCEEDINGS, 2005.Google Scholar
Trupke, T., Bardos, R.A., and Abbott, M.D., Self-consistent calibration of photoluminescence and photoconductance lifetime measurements. Applied Physics Letters, 2005. 87(18): p. -.Google Scholar
Sinton, R.A. and Cuevas, A., Contactless determination of current–voltage characteristics and minority–carrier lifetimes in semiconductors from quasi‐steady‐state photoconductance data. Applied Physics Letters, 1996. 69(17): p. 2510–2512.CrossRefGoogle Scholar
Teal, A., Flash Lamp Annealing and Photoluminescence Imaging of Thin Film Silicon Solar Cells on Glass (PhD Thesis). Univ. New South Wales, 2013.Google Scholar
Bentzen, A., et al. ., Gettering of transition metal impurities during phosphorus emitter diffusion in multicrystalline silicon solar cell processing. Journal of Applied Physics, 2006. 99(9): p. 093509–093509-6.CrossRefGoogle Scholar