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Photoluminescence Characterization of Inp-Based Hemt Structures

Published online by Cambridge University Press:  22 February 2011

Henry T. Hendriks ,
Steven K. Brierley ,
William E. Hoke  and
Noren Pan
Henry T. Hendriks
Affiliation:
Raytheon Research Division, 131 Spring Street, Lexington, MA 02173
Steven K. Brierley
Affiliation:
Raytheon Research Division, 131 Spring Street, Lexington, MA 02173
William E. Hoke
Affiliation:
Raytheon Research Division, 131 Spring Street, Lexington, MA 02173
Noren Pan
Affiliation:
Raytheon Research Division, 131 Spring Street, Lexington, MA 02173
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Abstract

InP-based lattice matched high electron mobility transistor (HEMT) structures have been characterized by liquid nitrogen temperature photoluminescence. A phenomenological line shape model has been utilized to fit photoluminescence spectra in order to obtain key parameters, such as the subband energies and transition amplitudes. From transition amplitude ratios and subband energies, fundamental quantum well characteristics are inferred. Changes in these parameters are linked to variations in the growth conditions of the epitaxial layer structures.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 324: Symposium K – Diagnostic Techniques for Semiconductor Materials Processing , 1993 , 211
Copyright
Copyright © Materials Research Society 1994

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