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Photoluminescence and Structure of Chemically Etched Si

Published online by Cambridge University Press:  15 February 2011

S. Shih
Affiliation:
Microelectronics Research Center, Department of Electrical and Computer Engineering, The University of Texas at Austin, Austin, TX 78712
K. H. Jung
Affiliation:
Microelectronics Research Center, Department of Electrical and Computer Engineering, The University of Texas at Austin, Austin, TX 78712
T. Y. Hsieh
Affiliation:
Microelectronics Research Center, Department of Electrical and Computer Engineering, The University of Texas at Austin, Austin, TX 78712
J. Sarathy
Affiliation:
Microelectronics Research Center, Department of Electrical and Computer Engineering, The University of Texas at Austin, Austin, TX 78712
C. Tsai
Affiliation:
Microelectronics Research Center, Department of Electrical and Computer Engineering, The University of Texas at Austin, Austin, TX 78712
K.-H. Li
Affiliation:
Microelectronics Research Center, Department of Electrical and Computer Engineering, The University of Texas at Austin, Austin, TX 78712
J. C. Campbel
Affiliation:
Microelectronics Research Center, Department of Electrical and Computer Engineering, The University of Texas at Austin, Austin, TX 78712
D. L. Kwong
Affiliation:
Microelectronics Research Center, Department of Electrical and Computer Engineering, The University of Texas at Austin, Austin, TX 78712
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Abstract

We demonstrate for the first time that chemical etching of Si in HF-HNO3-based solution without applying bias can produce a room temperature photoluminescent porous Si layer. Scanning electron microscope studies reveal a surface morphology similar to that of the conventionally anodized porous Si. The formation mechanism of the chemically etched (CE) film can be explained by a local anodization concept. X-ray diffraction studies on the luminescent CE porous Si show a broad amorphous peak.

Type
Research Article
Copyright
Copyright © Materials Research Society 1992

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References

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