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Photoluminescence and Structure of Chemically Etched Si
Published online by Cambridge University Press: 15 February 2011
Abstract
We demonstrate for the first time that chemical etching of Si in HF-HNO3-based solution without applying bias can produce a room temperature photoluminescent porous Si layer. Scanning electron microscope studies reveal a surface morphology similar to that of the conventionally anodized porous Si. The formation mechanism of the chemically etched (CE) film can be explained by a local anodization concept. X-ray diffraction studies on the luminescent CE porous Si show a broad amorphous peak.
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- Copyright © Materials Research Society 1992
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