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Photoluminescence and Structure of Chemically Etched Si

Published online by Cambridge University Press:  15 February 2011

S. Shih ,
K. H. Jung ,
T. Y. Hsieh ,
J. Sarathy ,
C. Tsai ,
K.-H. Li ,
J. C. Campbel  and
D. L. Kwong
S. Shih
Affiliation:
Microelectronics Research Center, Department of Electrical and Computer Engineering, The University of Texas at Austin, Austin, TX 78712
K. H. Jung
Affiliation:
Microelectronics Research Center, Department of Electrical and Computer Engineering, The University of Texas at Austin, Austin, TX 78712
T. Y. Hsieh
Affiliation:
Microelectronics Research Center, Department of Electrical and Computer Engineering, The University of Texas at Austin, Austin, TX 78712
J. Sarathy
Affiliation:
Microelectronics Research Center, Department of Electrical and Computer Engineering, The University of Texas at Austin, Austin, TX 78712
C. Tsai
Affiliation:
Microelectronics Research Center, Department of Electrical and Computer Engineering, The University of Texas at Austin, Austin, TX 78712
K.-H. Li
Affiliation:
Microelectronics Research Center, Department of Electrical and Computer Engineering, The University of Texas at Austin, Austin, TX 78712
J. C. Campbel
Affiliation:
Microelectronics Research Center, Department of Electrical and Computer Engineering, The University of Texas at Austin, Austin, TX 78712
D. L. Kwong
Affiliation:
Microelectronics Research Center, Department of Electrical and Computer Engineering, The University of Texas at Austin, Austin, TX 78712
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Abstract

We demonstrate for the first time that chemical etching of Si in HF-HNO3-based solution without applying bias can produce a room temperature photoluminescent porous Si layer. Scanning electron microscope studies reveal a surface morphology similar to that of the conventionally anodized porous Si. The formation mechanism of the chemically etched (CE) film can be explained by a local anodization concept. X-ray diffraction studies on the luminescent CE porous Si show a broad amorphous peak.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 256: Symposia AA – Light Emission from Silicon , 1991 , 27
Copyright
Copyright © Materials Research Society 1992

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References

REFERENCES

1. Canham, L. T., Appl. Phys. Lett. 51 1046 (1990).Google Scholar
2. Gardelis, S., Rimmer, J. S., Dawson, P., Hamilton, B., Kubiak, R. A., Whall, T. E., and Parker, E. H. C., Appl. Phys. Lett. 59, 2118 (1991).CrossRefGoogle Scholar
3. Cullis, A. G. and Canham, L. T., Nature 353, 335 (1991).CrossRefGoogle Scholar
4. Tsai, C., Li, K.-H., Sarathy, J., Shih, S., Campbell, J. C., Hance, B. K., and White, J. M., Appl. Phys. Lett. 59, 2814 (1991).Google Scholar
5. Jung, K. H., Shih, S., Hsieh, T. Y., Kwong, D. L., George, T., and Lin, T. L. (submitted for publication).Google Scholar
6. Arita, Y., J. Crystal Growth 45, 383 (1978).Google Scholar
7. Turner, D. R., J. Electrochem. Soc. 107, 810 (1960).Google Scholar
8. Robbins, H. and Schwartz, B., J. Electrochem. Soc. 106, 505(1959).Google Scholar
9. Robbins, H. and Schwartz, B., J. Electrochem. Soc. 107, 108(1960).Google Scholar
10. Schwartz, B. and Robbins, H., J. Electrochem. Soc. 108, 365 (1961).Google Scholar
11. Schwartz, B. and Robbins, H., J. Electrochem. Soc. 123, 1903 (1976).Google Scholar
12. Searson, P. C., Appl. Phys. Lett. 52, 832 (1991).CrossRefGoogle Scholar
13. Cullity, B. D., Elements of X-ray Diffraction, 2nd ed. (Addison-Wesley Publishing Company, Inc., 1978).Google Scholar
14. Guinier, A., X-ray Diffraction in Crystals. Imperfect Crystals. and Amorphous Bodies (Freeman, W. H.: San Francisco, 1963).Google Scholar
15. Warren, B. E., X-ray Diffraction (Addison-Wesley Publishing Company, Inc., 1969).Google Scholar
16. Jung, K. H., Shih, S., Hsieh, T. Y., Kwong, D. L., Liu, H. Y., George, T., Lin, T. L., Novak, S., and J. Zavada (submitted for publication).Google Scholar