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Photoluminescence and Raman spectra in Ga-doped ZnO layers on sapphire

Published online by Cambridge University Press:  01 February 2011

Michael A. Reshchikov ,
S. Nagata ,
J. Xie ,
B. Hertog  and
A. Osinsky
Michael A. Reshchikov
Affiliation:
[email protected], Virginia Commonwealth University, Department of Physics, 1020 West Main Street, Richmond, VA, 23284, United States, 804-828-1613, 804-828-7073
S. Nagata
Affiliation:
[email protected], Virginia Commonwealth University, Department of Physics, Richmond, VA, 23284, United States
J. Xie
Affiliation:
[email protected], SVT Associates, Inc., Eden Prairie, MN, 55344, United States
B. Hertog
Affiliation:
[email protected], SVT Associates, Inc., Eden Prairie, MN, 55344, United States
A. Osinsky
Affiliation:
[email protected], SVT Associates, Inc., Eden Prairie, MN, 55344, United States
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Abstract

Ga-doped ZnO layers were grown on sapphire substrates by molecular beam epitaxy (MBE). Low-temperature photoluminescence (PL) and room-temperature Raman spectra were investigated. Defect-related modes at 277 and 510 cm−1 appeared in the Raman spectrum for Ga-doped layers. The PL spectrum is dominated by a donor-bound exciton peak at 3.356 eV. A weak yellow luminescence (YL) band peaking at 2.1-2.2 eV was studied in detail. It shifted to higher photon energies (up to 0.1 eV) with increasing excitation intensity. The YL band is attributed to transitions from shallow donors to a deep acceptor. The acceptor is thought to be a Zn vacancy-related defect because the intensity of the YL band decreased dramatically with Ga doping.

Keywords

defectsluminescencedopant
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1035: Symposium L – Zinc Oxide and Related Materials–2007 , 2007 , 1035-L13-12
Copyright
Copyright © Materials Research Society 2008

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