No CrossRef data available.
Article contents
Photoluminescence and Raman Scattering from (CdSe)m,(ZnSe)n-ZnSe Multiple Quantum Wells Under Hydrostatic Pressure
Published online by Cambridge University Press: 15 February 2011
Abstract
The photoluminescence and Raman scattering of {|(CdSe)1 (ZnSe)3|14-(ZnSe)130} × 5 multiple quantum well structure have been investigated at 77 K and under hydrostatic pressure up to 7 GPa. Resonant excitations have been accomplished by turning the electronic levels under hydrostatic high pressure. Two kind of excitons and ZnSe-like LO phonon modes as well as their pressure behavior are presented.
- Type
- Research Article
- Information
- Copyright
- Copyright © Materials Research Society 1996
References
1.
Haase, M. A., Qibu, J., DePuydt, J. M. and Cheng, H., Appl. Phys. Lett.
59, p.1272 (1991).Google Scholar
2.
Nakayanra, N., Itoh, S., Okuyana, H., Ozawa, M., Ohata, T., Nakano, K., Ikeda, M., Ishibashi, A. and Mori, Y., Electron. Lett. 29, p.2194 (1993).Google Scholar
3.
Eason, D., Ren, J., Yu, Z., Hughes, C., Cook, J.W. Jr, Schetzina, J.F., EI-Masry, N.A., Cantwell, G. and Harsh, W.C., J. Cryst. Growth, 150, p.718 (1995).Google Scholar
4.
Zajicek, H., Juza, P., Abramof, E., Pankratov, O., Siffer, H., Heln, M., Brunthaler, G., Fasachinger, W. and Lischka, K., Appl. Phys. Lett.
62, p.717 (1993).Google Scholar
5.
Parbrook, P. J., Henderson, B., O'Donnell, K. P., Wright, P. J. and Cockayne, B., J. Cryst. Growth, 117, p. 492 (1992).Google Scholar
6.
Peng, Z. L., Li, J., Yao, W. H., He, L., Cheng, X. Y. and Yuan, S. X., Jpn. J. Appl. Phys.
31, p. L1583 (1992).Google Scholar
7.
Rockwell, B., Chandrasekhar, H. R., Chandrasekhar, M., Ramdas, A. K., Kobayashi, M. and Gunshor, R. L., Phys.Rev. B44, p.11307 (1991).Google Scholar
8.
Shan, W., Hays, J. M., Yang, X. H., Song, J. I., Cantwell, E. and Aldridge, J., Appl. Phys. Lett.
60, p.736 (1992).Google Scholar
9.
Cui, L. J., Venkateswarn, U. D., Weinstein, B. A. and Jonker, B. T., Phys. Rev. B44, p. 10949 (1991).Google Scholar
10.
Hwang, S. J., Sham, W., Song, J. J., Zhu, Z. Q. and Yao, T., Appl. Phys. Lett.
64, p. 2267 (1994).Google Scholar
12.
Alonso, R. G., Suh, E. K., Ramdas, A. K., Samarth, N., Luo, H. and Furdyna, J. K., Phys. Rev. B40, p. 3720 (1989).Google Scholar
13.
Wang, Z. P., Han, H. X., Liu, Z. X., Qin, W. T., Peng, Z. L. and Yuan, S. X., in Growth, Processing and Characterization of Semiconductor Hletrostrucxtures, edited by Gumbs, G., Luryi, S., Weiss, B. and Wick, G.W. (Mater. Res. Soc. Proc.
326, Pittsburgh, PA
1994), p.425–430.Google Scholar
14.
Li, G.H., Han, H.X., Wang, Z.P., Li, J., Ho, L. and Yuan, S.X., Chin.J.Semicond.
14, p. 199 (1993).Google Scholar