Hostname: page-component-586b7cd67f-2plfb Total loading time: 0 Render date: 2024-11-25T15:26:12.034Z Has data issue: false hasContentIssue false
  • English
  • Français

Photoluminescence and Photomodulation Spectroscopy of CdTe/Cd1−xMnxTe:In Multiple Quantum Wells

Published online by Cambridge University Press:  15 February 2011

S. Jiang ,
L.J. Zhang ,
J.M. Zhang  and
S.C. Shen
S. Jiang
Affiliation:
CCAST(World Laboratory) P.O.Box 8730, Beijing 100080, CHINA
L.J. Zhang
Affiliation:
National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Academia Sinica, Shanghai 200083, CHINA
J.M. Zhang
Affiliation:
National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Academia Sinica, Shanghai 200083, CHINA
S.C. Shen
Affiliation:
CCAST(World Laboratory) P.O.Box 8730, Beijing 100080, CHINA
Get access

Abstract

The photomodulated reflectivity (PR) spectroscopy of modulation-doped diluted magnetic semiconductor Cd0.72 Mn0.28 Te:In/CdTe multiple quantum wells has been measured at 20 K – 300 K. Several spectral features associated with intersubband transitions have been found. The feature associated with Fermi level is first reported in PR spectra of II–VI heterostructures. In addition, a abnormal transition intensity ratio of 22H to 11H caused by electron filled effect has been reported. The Photoluminescence(PL) spectra of the sample have also been measured at 10 K – 300 K. A strong enhancement of the photoluminescence intensity towards the electron Fermi energy, which is caused by multiple electron-hole scattering processes, is reported. The temperature dependence of the Fermiedge singularity has been measured and discussed. The mechanism of the Fermi-edge singularity can be explained by hole localization.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 299: Symposium C2 – Infrared Detectors--Materials, Processing, and Devices , 1994 , 59
Copyright
Copyright © Materials Research Society 1994

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Bicknell, R. N., Giles, N. C. and Schetzina, J. F., Appl. Phys. Lett. 49, 1095(1986).Google Scholar
2. Lee, Y. R. and Ramdas, A. K., Solid State Commun. 51, 861(1984).Google Scholar
3. Skolnick, M. S., Rorison, J. M., Nash, K. J., Mowbray, D. J., Tapster, P. R., Bass, S. J. and Pitt, A. D., Phys. Rev. Lett. 58, 2130(1987).Google Scholar
4. Shen, W., Fritze, M., Walecki, W. and Nurmikko, A. V., Phys. Rev. B 45, 8464(1992).Google Scholar
5. Blanks, D. K., Bicknell, R. N., Giles-Taylor, N. C., Schetzina, J. F., Petrou, A. and Warnock, J., J. Vac. Sci. Technol. B 4, 635(1986).Google Scholar
6. Schmitt-Rink, S., Ell, C. and Haug, H., Phys. Rev. B 33, 1183(1986)Google Scholar
7. Lay, K. Y., Neff, H., and Bachmann, K. J., Phys. Status Solidi A 92, 567(1985)Google Scholar