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Photoluminescence and Photoluminescence Excitation Spectra of GaAs Grown Directly on Si

Published online by Cambridge University Press:  25 February 2011

S. Zemon ,
S. K. Shastry ,
P. Norris ,
C. Jagannath  and
G. Lambert
S. Zemon
Affiliation:
GTE Laboratories, Inc., 40 Sylvan Road Waltham, MA 02254
S. K. Shastry
Affiliation:
GTE Laboratories, Inc., 40 Sylvan Road Waltham, MA 02254
P. Norris
Affiliation:
GTE Laboratories, Inc., 40 Sylvan Road Waltham, MA 02254
C. Jagannath
Affiliation:
GTE Laboratories, Inc., 40 Sylvan Road Waltham, MA 02254
G. Lambert
Affiliation:
GTE Laboratories, Inc., 40 Sylvan Road Waltham, MA 02254
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Abstract

The photoluminescence of GaAs/Si grown by OMCVD has been analyzed as a function of temperature and the dominant high temperature line identified as a conduction-band-to-valence-band transition. Photoluminescence excitation spectra indicate that the transition is excitonic at 4.2 K. A second line, also identified as intrinsic, dominates the spectra below 100 K. A biaxial tensile strain is proposed to account for the two intrinsic lines through a splitting of the valence band degeneracy.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 67: Symposium A – Heteroepitaxy on Silicon I , 1986 , 203
Copyright
Copyright © Materials Research Society 1986

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