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Photoluminescence and Photoacoüstic Spectroscopy of Si Single-and Multi-Step Ingot- and Wafer-Annealed GaAs Crystals

Published online by Cambridge University Press:  03 September 2012

O. Ka ,
O. Oda ,
S. Shigetomi ,
T. Ikari ,
Y. Makita  and
A. Yamada
O. Ka
Affiliation:
Electrotechnical Laboratory, 1–1–4 Umezono, Tsukuba 305, Japan
O. Oda
Affiliation:
Electronic Materials and Components Research Laboratories, Nippon Mining Co. Ltd, Niizo Minami, Saitama 335, Japan
S. Shigetomi
Affiliation:
Kurume Univ., Dep. of Physics, 1635 Mii-machi, Kurume 830, Japan
T. Ikari
Affiliation:
Miyazaki Univ., 1–1 Gakuenkibanadai, Miyazaki 889–21, Japan
Y. Makita
Affiliation:
Electrotechnical Laboratory, 1–1–4 Umezono, Tsukuba 305, Japan
A. Yamada
Affiliation:
Electrotechnical Laboratory, 1–1–4 Umezono, Tsukuba 305, Japan
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Abstract

SI GaAs crystals submitted to single- or multi-step, ingot-or wafer-annealing are investigated using photoluminescence (PL) and photoacoustic spectroscopy (PA). The near-band-edge PL transitions are well resolved, with a neutral acceptor-bound exciton recombination displayed as a split doublet. The improvement induced by wafer-annealing is illustrated by the absence of additional defect-related transitions found after ingot-annealing. For the room temperature PA measurements, the intensity of a peak occuring at 1.39 eV is shown to lead to an estimation of the arsenic micro-defect density as evaluated by AB etching. The 1.39 eV PA band is also asserted to be the non-radiative recombination path of a 1.482 eV band found in the low-temperature PL spectra.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 262: Symposium E – Defect Engineering in Semiconductor Growth, Processing and Device Technology , 1992 , 689
Copyright
Copyright © Materials Research Society 1992

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References

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