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Photoluminescence Activity of Neodymium-Doped Gallium Oxide Thin Films

Published online by Cambridge University Press:  01 February 2011

Celine Lecerf ,
Philippe Marie ,
Cedric Frilay ,
Julien Cardin  and
Xavier Portier
Celine Lecerf
Affiliation:
[email protected], ENSICAEN, CIMAP, Caen, France
Philippe Marie
Affiliation:
[email protected], ENSICAEN, CIMAP, Caen, France
Cedric Frilay
Affiliation:
[email protected], ENSICAEN, CIMAP, Caen, France
Julien Cardin
Affiliation:
[email protected], ENSICAEN, CIMAP, Caen, France
Xavier Portier
Affiliation:
[email protected], ENSICAEN, CIMAP, Caen, France
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Abstract

Photoluminescence activity was observed for neodymium-doped gallium oxide thin films prepared by radiofrequency magnetron co-sputtering. Structural and optical properties of as-grown and annealed films were studied and photoluminescence activity was especially investigated. The most intense lines were associated to the 4F3/2 → 4I9/2 and 4F3/2 → 4I11/2 electronic transitions of Nd3+. The effects of deposition and treatment parameters such as the substrate temperature, the post anneal treatment or the neodymium content in the films were particularly examined with the aim to reach the best luminescence efficiency.

Keywords

transparent conductorthin filmphotoemission
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1111: Symposium D – Rare-Earth Doping of Advanced Materials for Photonic Applications , 2008 , 1111-D07-04
Copyright
Copyright © Materials Research Society 2009

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References

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