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Photo-Leakage-Current Analysis of Poly-Si TFT by Using Rear Irradiation OBIC Method

Published online by Cambridge University Press:  10 February 2011

Masatoshi Wakagi ,
Tatsuya Ookubo ,
Masahiko Ando ,
Genshiro Kawachi ,
Akio Mimura  and
Tetsuroh Minemura
Masatoshi Wakagi
Affiliation:
Hitachi Research Laboratory, Hitachi, Ltd., 7-1-1 Omika-cho, Hitachi-shi, 319-1292, Japan
Tatsuya Ookubo
Affiliation:
Hitachi Research Laboratory, Hitachi, Ltd., 7-1-1 Omika-cho, Hitachi-shi, 319-1292, Japan
Masahiko Ando
Affiliation:
Hitachi Research Laboratory, Hitachi, Ltd., 7-1-1 Omika-cho, Hitachi-shi, 319-1292, Japan
Genshiro Kawachi
Affiliation:
Hitachi Research Laboratory, Hitachi, Ltd., 7-1-1 Omika-cho, Hitachi-shi, 319-1292, Japan
Akio Mimura
Affiliation:
Hitachi Research Laboratory, Hitachi, Ltd., 7-1-1 Omika-cho, Hitachi-shi, 319-1292, Japan
Tetsuroh Minemura
Affiliation:
Hitachi Research Laboratory, Hitachi, Ltd., 7-1-1 Omika-cho, Hitachi-shi, 319-1292, Japan
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Abstract

Photo-leakage-current of poly-Si (polycrystalline Si) TFFs has been investigated by using the rear irradiation OBIC (Optical Beam Induced Current) method. In the case of the offset gate TFIs, it was found that the photo-leakage-current was generated in the offset region of the drain electrode side. In order to reduce the photo-leakage-current, low concentration phosphor (P) was doped in the offset region, which corresponds to LDD (Lightly Doped Drain) structure. In the LDD TFT, the photo leakage current at the offset region decreased remarkably, because of the reduction of hole transportation in this region.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 507: Symposium A – Amorphous & Microcrystalline Silicon Technology 1998 , 1998 , 55
Copyright
Copyright © Materials Research Society 1998

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References

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