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Photo-Irradiation-Induced Narrowing of Photoluminescence Spectra from Porous Silicon

Published online by Cambridge University Press:  15 February 2011

M. Okamoto ,
T. Nagao ,
T. Ooiwa ,
A. Hatta  and
T. Ilo
M. Okamoto
Affiliation:
Department of Electrical Engineering, Osaka University, 2–1 Yamadaoka, Suita, Osaka 565, Japan, [email protected]
T. Nagao
Affiliation:
Department of Electrical Engineering, Osaka University, 2–1 Yamadaoka, Suita, Osaka 565, Japan, [email protected]
T. Ooiwa
Affiliation:
Department of Electrical Engineering, Osaka University, 2–1 Yamadaoka, Suita, Osaka 565, Japan, [email protected]
A. Hatta
Affiliation:
Department of Electrical Engineering, Osaka University, 2–1 Yamadaoka, Suita, Osaka 565, Japan, [email protected]
T. Ilo
Affiliation:
Department of Electrical Engineering, Osaka University, 2–1 Yamadaoka, Suita, Osaka 565, Japan, [email protected]
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Abstract

Porous silicon (PS) has been prepared by varying photo-irradiation time in the latter period of anodization, and spectral intensity and width of photoluminescence (PL) have been measured as well as their dependences on current density during the photo-irradiation. Significant differences in PL spectra have been found when the timing of photo-irradiation is varied during the anodization. Sufficient numbers of photo-excited holes are responsible for the formation of PS layers yielding bright and sharp PL. The narrowest FWHM obtained was 0.182eV for a PL peak energy of 1.71eV while the highest peak energy of PL with FWHM < 0.30 eV was 2.16 eV (575 nm).

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 452 , 1996 , 529
Copyright
Copyright © Materials Research Society 1997

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References

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