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Photoinduced Paramagnetic Defects in Amorphous Silicon Dioxide

Published online by Cambridge University Press:  25 February 2011

J. H. Stathis  and
M. A. Kastner
J. H. Stathis
Affiliation:
Department of Physics and Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA 02139
M. A. Kastner
Affiliation:
Department of Physics and Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA 02139
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Abstract

Several paramagnetic defects are created by exposure of amorphous SiO2 to sub-band-gap light. The spectra of the dominant centers can be isolated by using their annealing, microwave power, and excitation-photonenergy dependence. The results are discussed in terms of specific models for the intrinsic defects in a-SiO2.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 61: Symposium P – Defects in Glasses , 1985 , 161
Copyright
Copyright © Materials Research Society 1986

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