Hostname: page-component-586b7cd67f-t7czq Total loading time: 0 Render date: 2024-11-25T17:39:05.235Z Has data issue: false hasContentIssue false
  • English
  • Français

Photoinduced Expansion in Hydrogenated Amorphous Silicon

Published online by Cambridge University Press:  15 February 2011

S. Nonomura ,
T. Gotoh ,
M. Nishio ,
T. Sakamoto ,
M Kondo ,
A. Matsuda  and
S. Nitta
S. Nonomura
Affiliation:
Department of Electrical Engineering, Gifu University, 1-1 Yanagido, Gifu 501-1193, Japan
T. Gotoh
Affiliation:
Department of Electrical Engineering, Gifu University, 1-1 Yanagido, Gifu 501-1193, Japan
M. Nishio
Affiliation:
Department of Electrical Engineering, Gifu University, 1-1 Yanagido, Gifu 501-1193, Japan
T. Sakamoto
Affiliation:
Department of Electrical Engineering, Gifu University, 1-1 Yanagido, Gifu 501-1193, Japan
M Kondo
Affiliation:
Thin Film Silicon Solar Cells Superlab, ETL, Ibaraki, Japan
A. Matsuda
Affiliation:
Thin Film Silicon Solar Cells Superlab, ETL, Ibaraki, Japan
S. Nitta
Affiliation:
Department of Electrical Engineering, Gifu University, 1-1 Yanagido, Gifu 501-1193, Japan
Get access

Abstract

The structural aspect of photodegradation effect in hydrogenated amorphous silicon has been investigated by the use of the simple and sensitive detection technique, the laser optical-lever bending method, for a small expansion or extraction in thin films. The volume change induced by the thermal expansion due to the photothermal effect and the residual expansion was observed in hydrogenated amorphous silicon prepared by PECVD. The latter residual expansion was persistent after light soaking and was recovered by thermal annealing at 200°C.The time dependence of the volume expansion with light soaking shows the same time dependence of photoinduced defect density. The photoinduced volume changes normalized by the initial volume are the order of 10-5~10-5, which values are two orders smaller than chalcogenide glasses such as a-As2S3. The normalized volume change of a-Si:H with the different sample preparation conditions of PECVD such as the hydrogen dilution ratio r (r = SiH4/H2) and substrate temperature is shown. Also it is demonstrated that the photoinduced expansion is observed in hydrogenated amorphous silicon prepared by photo CVD and hot-wire CVD methods. The spatial extent related to a photoinduced defect creation in a-Si:H is estimated.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 557: Symposium A – Amorphous and Heterogeneous Silicon Thin Films—Fundamentals to Devices—1999 , 1999 , 337
Copyright
Copyright © Materials Research Society 1999

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Staebler, D.L. and Wronski, C.R., Appl. Phys. Lett. 31, p.292 (1977).Google Scholar
2. Dersch, H. et al., Phys. Stat. Sol. (b) 105, p.265 (1981).Google Scholar
3. Stuzmann, M. et al., Phys. Rev. B 34, p.63 (1986).Google Scholar
4. Stuzmann, M. et al., Ouyoubutsuri (in Japanese) 60, p.1004 (1991).Google Scholar
5. Hamanaka, H., Tanaka, K. and lijima, S., Solid State Commun. 19, p.499 (1976).Google Scholar
6. Shimizu, K., Shiba, T., Tabuchi, T. and Okamoto, H., Jpn. J. Appl. Phys. 36, p.29 (1997).Google Scholar
7. Kato, T., et al., Technical Digest Int. PVSEC-9, Miyazaki, C–V–3, (1996), p.561–562.Google Scholar
8. Fritzsche, H., Solid State Commun. 94, p.953 (1995).Google Scholar
9. Gotoh, T., Nonomura, S., Hirata, S., Masui, N. and Nitta, S., Solar Energy Materials & Solar Cells 49, p.13–18 (1997).Google Scholar
10 Gotoh, T., Nonomura, S., Nishio, M., Nitta, S., Kondo, M. and Matsuda, A., Appl. Phys.Lett. 72, p.2978 (1998).Google Scholar
11. Gotoh, T., Nonomura, S., Hirata, S. and Nitta, S., Progress in Natural Science 6, p.S–34 (1996).Google Scholar
12. Han, D., Gotoh, T., Nishio, M., Sakamoto, T., Nonomura, S., Nitta, S., Wang, Q. and Iwaniczko, E., Materials Research Society Symp. Proceedings 505, p.445 (1998).Google Scholar
13. Stoney, G.G., Proc. Roy. Soc. A82, p.172 (1909).Google Scholar
14. Nickel, N.H., Jackson, W.B. and Johnson, N.M., Phys. Rev. Lett. 71, p.2733 (1993).Google Scholar
15. Meire, J., Fluckiger, R., Keppner, H., Sah, A., Appl. Phys. Lett. 65, p. 860 (1994).Google Scholar
16. Kondo, M., Nishimiya, T., Saito, K., Matsuda, A., J. Non-Cryst. Solids, 227–230, p.1031 (1998).Google Scholar