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Photoemission Study of the α-Sn/Cdte(110) Interface Growth

Published online by Cambridge University Press:  25 February 2011

Ming Tang ,
David W. Niles ,
Isaac Hernández-Calderón  and
Hartmut Hóchst
Ming Tang
Affiliation:
Synchrotron Radiation Center, University of Wisconsin-Madison, 3731 Schneider Drive, Stoughton, WI 53589
David W. Niles
Affiliation:
Synchrotron Radiation Center, University of Wisconsin-Madison, 3731 Schneider Drive, Stoughton, WI 53589
Isaac Hernández-Calderón
Affiliation:
Physics Department, Centro de Investigacion y, Estudios Avanzados del IPN, Mexico D.F.
Hartmut Hóchst
Affiliation:
Synchrotron Radiation Center, University of Wisconsin-Madison, 3731 Schneider Drive, Stoughton, WI 53589
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Abstract

Angular Resolved Photoemission Spectroscopy with Synchrotron radiation has been used to study the MBE growth of α-Sn on CdTe(110). Sn grows epitaxially and the Fermi level pins at 0.72eV above the CdTe valence band maximum. Outdiffusion or segregation of Cd in the α-Sn layer is not observed. For small Sn coverages the Sn4d core spectra show a second component which may be due to the initial interfacial growth of SnTe.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 94: Symposium D – Initial Stages of Epitaxial Growth , 1987 , 213
Copyright
Copyright © Materials Research Society 1987

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References

REFERENCES

1. Broerman, G.A., Phys. Rev. Letters, 45, 747 (1980)CrossRefGoogle Scholar
2. Farrow, R.F.C., Robertson, D.S., Williams, G.M., Cullis, A.G., Jones, G.R., Young, I.M. and Dennis, P.N.J., J. of Crystal Growth. North-Holland. 54, 507 (1981)CrossRefGoogle Scholar
3. Höchst, H. and Hernández-Calderón, I., Surf. Sci. 126, 25 (1983)CrossRefGoogle Scholar
4. Hernández-Calderón, I. and Höchst, H., Phys. Rev. B 27, 4961 (1983)CrossRefGoogle Scholar
5. Höchst, H. and Hernández-Calderón, I., J. Vac. Sci. Technol. A 3, 911 (1985)CrossRefGoogle Scholar
6. Viña, L., Höchst, H. and Cardona, M., Phys. Rev. B 31 958 (1985)Google Scholar
7. Menéndez, J. and Höchst, H., Thin Solid Films. 111, 375 (1984)CrossRefGoogle Scholar
8. Ming, Tang, Niles, D.W., Hernández-Calderón, I., and Höchst, H., to be publishedGoogle Scholar
9. Craig, B.I. and Garrison, B.J., Phys. Rev. B 33, 8130 (1986)CrossRefGoogle Scholar
10. John, P., Miller, T., Hsieh, T.C., Shapiro, A.P., Wachs, A.L. and Chiang, T.C., Phys. Rev. B 34, 6704 (1986)CrossRefGoogle Scholar
11. Tang, Ming, Niles., D.W Hernández-Calderón, I. and Höchst, H., to be published Phys. Rev. B (1987)Google Scholar