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A Photoemission Study of the Epitaxial Growth of Si on Gap(110)

Published online by Cambridge University Press:  25 February 2011

David W. Niles ,
Ming Tang  and
Hartmut Höchst
David W. Niles
Affiliation:
Synchrotron Radiation Center, University of Wisconsin-Madison, 3731 Schneider Drive, Stoughton, WI 53589
Ming Tang
Affiliation:
Synchrotron Radiation Center, University of Wisconsin-Madison, 3731 Schneider Drive, Stoughton, WI 53589
Hartmut Höchst
Affiliation:
Synchrotron Radiation Center, University of Wisconsin-Madison, 3731 Schneider Drive, Stoughton, WI 53589
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Abstract

We have used angular resolved ultraviolet photoemission spectroscopy to study the epitaxial growth of Si on GaP(110). Surface state emission obscures the top of the valence band (TVB). The Fermi level for the clean GaP(110) surface is 1.20±0.05eV above the TVB. 1ML (monolayer) of Si pins the Fermi level position at 1.40±0.05eV above the TVB. Further deposition of Si leads to a valence band discontinuity ΔEv=1.07 ±0.10eV.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 94: Symposium D – Initial Stages of Epitaxial Growth , 1987 , 207
Copyright
Copyright © Materials Research Society 1987

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References

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