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Photoemission Study of The Electronic Structure of Wurtzite Gan(0001) Surfaces

Published online by Cambridge University Press:  10 February 2011

Kevin E. Smith ,
Sarnjeet S. Dhesi ,
Cristian B. Stagarescu ,
James Downes ,
D. Doppalapudi  and
Theodore D. Moustakas
Kevin E. Smith*
Affiliation:
Department of Physics, Boston University, Boston, MA 02215
Sarnjeet S. Dhesi
Affiliation:
Department of Physics, Boston University, Boston, MA 02215
Cristian B. Stagarescu
Affiliation:
Department of Physics, Boston University, Boston, MA 02215
James Downes
Affiliation:
Department of Physics, Boston University, Boston, MA 02215
D. Doppalapudi
Affiliation:
Department of Electrical and Computer Engineering, Boston University, Boston, MA 02215.
Theodore D. Moustakas
Affiliation:
Department of Electrical and Computer Engineering, Boston University, Boston, MA 02215.
*
†author to whom correspondence should be addressed. Electronic mail.: [email protected]
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Abstract

The surface electronic structure of wurtzite GaN (0001) (1 × 1) has been investigated using angle-resolved photoemission spectroscopy. Surfaces were cleaned by repeated cycles of N2 ion bombardment and annealing in ultra-high vacuum. A well-defined surface state below the top of the valence band is clearly observed. This state is sensitive to the adsorption of both activated H2 and O2, and exists in a projected bulk band gap, below the valence band maximum. The state shows no dispersion perpendicular or parallel to the surface. The symmetry of this surface state is even with respect to the mirror planes of the surface and polarization measurements indicate that it is of spz character, consistent with a dangling bond state.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 482 , 1997 , 787
Copyright
Copyright © Materials Research Society 1998

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Footnotes

‡

Present address: Department of Physics, University of York, York, Y01 5DD, UK

‡‡

On leave from the Institute of Microtechnology, Bucharest, Romania.

References

1. Wide Band Gap Semiconductors, MRS Symp. Proc. 242, Ed. Moustakas, T.D., Pankove, J.I., and Hamakawa, Y., (1992); S. Strite and H. Morkoç H, J. Vac. Sci. Technol. B10, 1237 (1992)Google Scholar
2. See for example: Angle Resolved Photoemission, Ed. Kevan, S.D., Elsevier, Amsterdam, 1991; Smith, K.E. and Kevan, S.D., Prog. Solid State Chem. 21,49(1991).Google Scholar
3. Lei, T., Fanciulli, M., Molnar, R.J., Moustakas, T.D., Graham, R.J., and Scanlon, J., App. Phy. Lett. 59, 944 (1991).Google Scholar
4. Kevan, S.D., Rev. Sci. Instrum. 54, 1441 (1983).Google Scholar
5. Bermudez, V.M., Kaplan, R., Khan, M.A. and Kuznia, J.N., Phys. Rev. B48, 2436 (1993).Google Scholar
6. Bermudez, V.M., Appl. Surf. Sci. (in press).Google Scholar
7. See for example Chiang, T.-C., Knapp, J.A., Aono, M., and Eastman, D.E., Phys. Rev. B21, 3513 (1980), and Ref. 2.Google Scholar
8. Dhesi, S.S., Stagarescu, C.B., Smith, K.E., Doppalapudi, D., Singh, R. and Moustakas, T.D., Phys. Rev. B56, 10271 (1997).Google Scholar
9. Rubio, A., Corkill, J.L., Cohen, M.L., Shirley, E.L., and Louie, S.G., Phys. Rev. B 48, 11810 (1993).Google Scholar