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Photoemission Study of Interfacial Oxidation in ZrO2/subnanometer SiONx/Si(100) Stacked Structures

Published online by Cambridge University Press:  11 February 2011

Seiichi Miyazaki ,
Hiroki Yamashita ,
Hiroshi Nakagawa  and
Masanori Yamaoka
Seiichi Miyazaki
Affiliation:
Graduate School of Advanced Sciences of Matter, Hiroshima University, Kagamiyama 1–3–1, Higashi-Hiroshima 739–8530, Japan Phone: +81–824–24–7648, Fax: +81–824–22–7038, E-mail: [email protected]
Hiroki Yamashita
Affiliation:
Graduate School of Advanced Sciences of Matter, Hiroshima University, Kagamiyama 1–3–1, Higashi-Hiroshima 739–8530, Japan Phone: +81–824–24–7648, Fax: +81–824–22–7038, E-mail: [email protected]
Hiroshi Nakagawa
Affiliation:
Graduate School of Advanced Sciences of Matter, Hiroshima University, Kagamiyama 1–3–1, Higashi-Hiroshima 739–8530, Japan Phone: +81–824–24–7648, Fax: +81–824–22–7038, E-mail: [email protected]
Masanori Yamaoka
Affiliation:
Graduate School of Advanced Sciences of Matter, Hiroshima University, Kagamiyama 1–3–1, Higashi-Hiroshima 739–8530, Japan Phone: +81–824–24–7648, Fax: +81–824–22–7038, E-mail: [email protected]
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Abstract

For staked structures consisting of evaporated ZrO2 and ∼0.6nm-thick silicon oxynitride formed on Si(100), the blocking capability of the silicon oxynitride against oxidation in dry-O2 anneal at 500°C has been studied as a function of nitrogen content in the barrier layer in the range within ∼11at.%. With increasing nitrogen content, the interfacial oxide thickness is decreased linearly and, to suppress the growth of the interfacial oxide layer within two monolayers, a nitrogen content of ∼10at.% is necessary. Observed efficient blocking against oxidation, even for the case with a nitrogen content as small as ∼6at.%, is attributable to the improved homogeneity in the Si-O-Si bonding features at the interface by nitrogen incorporation of a few at.%, which is suggested from the experimental fact that the bandwidth of LO phonons near the interface due to the nitrogen incorporation is decreased as obtained by FT-IR-ATR measurements.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 747: Symposia T/V – Crystalline Oxides on Semiconductors – Interfacial Issues for Oxide-Based Electronics , 2002 , V3.7
Copyright
Copyright © Materials Research Society 2003

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References

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