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Photoemission Study of Energy Band Alignment of Ge2Sb2Te5 and Common CMOS Materials

Published online by Cambridge University Press:  01 February 2011

Lina Wei-Wei Fang ,
Ji-Sheng Pan ,
Andy Eu-Jin Lim ,
Rinus Tek-Po Lee ,
Minghua Li ,
Rong Zhao ,
Luping Shi ,
Tow-Chong Chong  and
Yee-Chia Yeo
Lina Wei-Wei Fang
Affiliation:
[email protected], National University of Singapore, Department of Electrical and Computer Engineering, SNDL,National University of Singapore, Blk E4A #02-04 Engineering Drive 3, Singapore, 117576, Singapore
Ji-Sheng Pan
Affiliation:
[email protected], Institute of Materials Research and Engineering, A*STAR, 3 Research Link, Singapore, 117602, Singapore
Andy Eu-Jin Lim
Affiliation:
[email protected], National University of Singapore, Department of Electrical and Computer Engineering, Blk E4A #02-04, Engineering Drive 3, Singapore, 117576, Singapore
Rinus Tek-Po Lee
Affiliation:
[email protected], National University of Singapore, Department of Electrical and Computer Engineering, Blk E4A #02-04, Engineering Drive 3, Singapore, 117576, Singapore
Minghua Li
Affiliation:
[email protected], Data Storage Institute, A*STAR, DSI Building, 5 Engineering Drive 1, Singapore, 117608, Singapore
Rong Zhao
Affiliation:
[email protected], Data Storage Institute, A*STAR, DSI Building, 5 Engineering Drive 1, Singapore, 117608, Singapore
Luping Shi
Affiliation:
[email protected], Data Storage Institute, A*STAR, DSI Building, 5 Engineering Drive 1, Singapore, 117608, Singapore
Tow-Chong Chong
Affiliation:
[email protected], Data Storage Institute, A*STAR, DSI Building, 5 Engineering Drive 1, Singapore, 117608, Singapore
Yee-Chia Yeo
Affiliation:
[email protected], National University of Singapore, Department of Electrical and Computer Engineering, Blk E4A #02-04, Engineering Drive 3, Singapore, 117576, Singapore
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Abstract

We report the energy band alignment of Ge2Sb2Te5 and a variety of common complementary-metal-oxide-semiconductor (CMOS) compatible materials. These materials include silicon, silicon oxide, hafnium oxide, silicon nitride as well as nickel silicide. High-resolution X-ray photoelectron spectroscopy was employed as the main tool to obtain the core-level spectra, the valence band spectra, and the energy loss spectra. A precise determination of the valence band offsets of Ge2Sb2Te5 and the various materials were obtained. The conduction band offsets were then determined. The energy band line-ups of Ge2Sb2Te5 and these CMOS compatible materials were established.

Keywords

amorphousx-ray photoelectron spectroscopy (XPS)electronic structure
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1072: Symposium G – Phase-Change Materials for Reconfigurable Electronics and Memory Applications , 2008 , 1072-G02-08
Copyright
Copyright © Materials Research Society 2008

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References

REFERENCES

1. Lai, S. Tech. Dig. IEDM, p. 255, (2003).Google Scholar
2. Ovshinsky, S. R. Phys. Rev. Lett., 21, p. 1450, (1968).Google Scholar
3. Lai, S. and Lowrey, T. Tech. Dig. – IEDM, p. 36.5.1, (2001).Google Scholar
4. Zhang, T. Song, Z. Gong, Y. Lin, Y. Xu, C. Chen, Y. Liu, B. and Feng, S. Appl. Phys. Lett., 92, 113503, (2008).Google Scholar
5. Lee, S. Y. Choi, K.-J., Ryu, S.-O., Yoon, S.-M., Lee, N.-Y., Park, Y.-S., Kim, S.-H., Lee, S.-H., and Yu, B.-G., Appl. Phys. Lett., 89, 053517, (2006).Google Scholar
6. Kang, D.-H., Kim, I. H. Jeong, J.-H., Cheong, B.-K., Ahn, D.-H., Lee, D. Kim, H.-M., Kim, K.-B., and Kim, S.-H., J. Appl. Phys., 100, 054506, (2006).Google Scholar
7. Kraut, E. A. , Grant, R. W. Waldrop, J. R. and Kowalczyk, S. P. Phys. Rev. Lett., 44, 1620, (1980).Google Scholar
8. Lee, B.-S., Abelson, J. R. Bishop, S. G. Kang, D.-H., Cheong, B.-K., and Kim, K.-B., J. Appl. Phys., 97, 093905, (2005).Google Scholar
9. Miyazaki, S. J. Vac. Sci. Technol. B, 19, p. 2212, (2001).Google Scholar
10. Wei, X. Shi, L. Chong, T.-C., Zhao, R. and Lee, H. K. Jap. J. Appl. Phys., 46, p. 2211, (2007).Google Scholar