Hostname: page-component-7479d7b7d-fwgfc Total loading time: 0 Render date: 2024-07-08T16:08:19.107Z Has data issue: false hasContentIssue false
  • English
  • Français

Photoemission Studies of Amorphous Silicon/Germanium Heterojunctions

Published online by Cambridge University Press:  28 February 2011

F. Evangelisti ,
S. Modesti ,
F. Boscherini ,
P. Fiorini ,
C. Quaresima ,
M. Capozi  and
P. Perfetti
F. Evangelisti
Affiliation:
Dipartimento di Fisica, Universita´ “La Sapienza”, 00185 Roma, Italy
S. Modesti
Affiliation:
Dipartimento di Fisica, Universita´ “La Sapienza”, 00185 Roma, Italy
F. Boscherini
Affiliation:
Dipartimento di Fisica, Universita´ “La Sapienza”, 00185 Roma, Italy
P. Fiorini
Affiliation:
Dipartimento di Fisica, Universita´ “La Sapienza”, 00185 Roma, Italy
C. Quaresima
Affiliation:
Istituto di Struttura della Materia, 00044 Frascati, Italy
M. Capozi
Affiliation:
PULS, Laboratori Nazionali di Frascati, 00044 Frascati, Italy
P. Perfetti
Affiliation:
Istituto di Struttura della Materia, 00044 Frascati, Italy
Get access

Abstract

The heterostructures obtained by growing a-Ge on a-Si:H and a-Si have been investigated by synchrotron radiation photoemission. We measured valence band and core level spectra on the heterostructures grown in situ under ultrahigh-vacuum conditions. A step-by-step monitoring of possible band-bending changes during the interface formation enabled us to determine unambiguously the band discontinuities. The measured values of the valence band discontinuity were 0.2 ± 0.1 eV for a-Si:H/a-Ge and 0.0 ± 0.1 eV for a-Si/a-Ge, respectively. Evidence was found for the formation of abrupt interfaces without interdiffusion.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 49: Symposium F – Materials Issues in Applications of Amorphous Silicon Technology , 1985 , 95
Copyright
Copyright © Materials Research Society 1985

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1) Margaritondo, G., Stoffel, N.G., Katnani, A.D. and Patella, F., Solid State Commun. 36, 215 (1980); P. Perfetti, N.G. Stoffel, A.D.Katnani, G. Margaritondo, C. Quaresima, F. Patella, A. Savoia, C.M. Bertoni, C. Calandra, and F. Manghi, Phys. Rev. B24, 6174 (1981).CrossRefGoogle Scholar
2) Katnani, A.D. and Margaritondo, G., Phys. Rev. B28, 1944 (1983).CrossRefGoogle Scholar
3) Nakamura, G., Sato, K., Ishihara, T., Usui, M., Okaniwa, K. and Yukimoto, Y., J. Non-Cryst. Solids 59–60, 1111 (1983).Google Scholar
4) Ley, L. “The Physics of Hydrogenated Amorphous Silicon II”, Ed. Joannopoulos, and Lucovsky, , Springer Verlag 1984, p.82.Google Scholar
5) Connel, G.A.N., Temkin, R.J. and Paul, W., Adv. Phys. 22, 643 (1973).CrossRefGoogle Scholar
6) Bauer, R.S. and McMenamin, J.C., J. Vac. Sci. Technol. 15, 1444 (1978).CrossRefGoogle Scholar
7) Brodsky, M.H., Title, R.S., Weiser, K., and Pettit, G.D., Phys. Rev. B1, 2632 (1970).Google Scholar
8) Yonezawa, F. and Cohen, M.H., “Fundamental Physics of Amorphous Semiconductors”, Ed. Yonezawa, F., Springer-Verlag 1981, p.119.Google Scholar
9) Patella, F., Evangelisti, F., Fiorini, P., Perfetti, P., Quaresima, C., Kelly, M.K., Riedel, R.A. and Margaritondo, G., “Optical Effects in Amorphous Semiconductors”, Ed. Taylor, P.C. and Bishop, S.G., AIP Conference Proc. No.120 (1984) p.402.Google Scholar
10) Reichardt, J., Ley, L. and Johnson, R.L., J. Non-Cryst. Solids 59–60, 329 (1983).Google Scholar
11) Harrison, W., J. Vac. Sci. Technol. 14, 1016 (1977).CrossRefGoogle Scholar
12) Frensley, W.R. and Kroemer, H., Phys. Rev. B16, 2642 (1977).Google Scholar
13) Tersoff, J., Phys. Rev. B30, 4874 (1984).Google Scholar
14) Wesner, D. and Eberhardt, W., Phys. Rev. B28, 7087 (1983).Google Scholar
15) Patella, F., Sette, F., Perfetti, P., Quaresima, C., Capasso, C., Capozi, M., A.Savoia and Evangelisti, F., Solid State Commun. 49, 749 (1984).Google Scholar
16) Okamoto, H., Kida, H., Fukumoto, K., Nonomura, S. and Hamakawa, Y.. J. Non-Cryst. Solids 59–60, 1103 (1983).Google Scholar
17) Evangelisti, F., Fiorini, P., Giovannella, C., Patella, F., Perfetti, P., Quaresima, C. and Capozi, M., Appl. Phys. Lett.. 4, 764 (1984).Google Scholar