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A photoemission spectroscopic study of the interface formation in organic thin film transistors

Published online by Cambridge University Press:  15 March 2011

Neil J. Watkins
Affiliation:
Department of Physics and Astronomy, University of Rochester, Rochester, NY 14627, U.S.A.
Serkan Zorba
Affiliation:
Department of Physics and Astronomy, University of Rochester, Rochester, NY 14627, U.S.A.
Li Yan
Affiliation:
Department of Physics and Astronomy, University of Rochester, Rochester, NY 14627, U.S.A.
Yongli Gao
Affiliation:
Department of Physics and Astronomy, University of Rochester, Rochester, NY 14627, U.S.A.
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Abstract

Pentacene is widely used in organic thin film transistors due to relatively large mobilities. It has been suggested that the functional behavior in these organic thin film transistors occurs within the first few molecular layers of the device at the interfaces between the organic and the metals and dielectrics used in fabrication of the thin film transistors. This makes understanding the electronic behavior of the interfaces involved in these devices critical. In order to better understand these interfaces we investigated the interface formation using photoemission spectroscopy to examine layer by layer growth of pentacene on Au and Ag and vice versa. We observed indications of dipole formation at the interfaces between the metals and organics for organic on metal deposition. On the other hand, more complex material intermixing takes place during metal on organic deposition and as a result, the electronic structure of the interface differs from that of organic on metal deposition.

Type
Research Article
Copyright
Copyright © Materials Research Society 2002

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References

REFERENCES

1. Tsumura, A., Koezuka, H., Ando, T., Appl. Phys. Lett. 48, 1210 (1986).Google Scholar
2. Horowitz, G., Adv. Mater. 10, 365 (1998).Google Scholar
3. Katz, H. E., Bao, Z., J. Phys. Chem. B 104, 671 (2000).Google Scholar
4. Lin, Y. Y., Gundlach, D. J., Nelson, S. F., Jackson, T. N., IEEE Trans. Elect. Devices 44, 1325 (1997).Google Scholar
5. Jackson, T. N., Lin, Y. Y., Gundlach, D. J., Klauk, H., IEEE J. Sel. Topics in Quant. Elect. 4, 100 (1998).Google Scholar
6. Gundlach, D. J., Lin, Y. Y., Jackson, T. N., Nelson, S. F., Schlom, D. G., IEEE Elect. Device Lett. 18, 87 (1997).Google Scholar
7. Lin, Y. Y., Gundlach, D. J., Nelson, S. F., Jackson, T. N., IEEE Elect. Device Lett. 18, 606 (1997).Google Scholar
8. Dimitrakopoulos, C. D., Purushothaman, S., Kymissis, J., Callegari, A., Shaw, J. M., Science 283, 822 (1999).Google Scholar
9. Schön, J. H., Berg, S., Kloc, Ch., Batlogg, B., Science 287, 1022 (2000).Google Scholar
10. Schön, J. H., Kloc, Ch., Batlogg, B., Nature 406, 702 (2000).Google Scholar
11. Schön, J. H., Kloc, Ch., Batlogg, B., Science 288, 2338 (2000).Google Scholar
12. Schön, J. H., Meng, H., Bao, Z., Nature 413, 713 (2000).Google Scholar
13. Seshadri, K., Frisbie, C.D., Appl. Phys. Lett. 78, 993 (2001).Google Scholar
14. Watkins, N. J., Le, Q. T., Zorba, S., Yan, L., Gao, Y., Mat. Res. Soc. Symp. Proc. Vol. 660 JJ7.3 (2000)Google Scholar
15. Yan, Li, Mason, M.G., Tang, C.W., Gao, Yongli, Appl. Surf. Sci. 175–176, 412 (2001).Google Scholar