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Photoemission Optogalvanic Spectroscopy: An in situ Plasma-Surface Diagnostic

Published online by Cambridge University Press:  22 February 2011

Stephen W. Downey ,
Annette Mitchell  and
Richard A. Gottscho
Stephen W. Downey
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
Annette Mitchell
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
Richard A. Gottscho
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
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Abstract

An obstacle to better design and control of plasma processes is our limited ability to monitor surface properties in situ. We describe a new plasma diagnostic technique, photoemission optogalvanic spectroscopy, which can be used to monitor surface contamination, etching rates, and end points. The experiment consists of irradiating a surface with a pulsed excimer or dye laser whose photon energy is above the substrate work function. Photoemission of electrons from the surface is detected by monitoring changes in the discharge current (optogalvanic effect). The technique is characterized by measuring signal strengths as a function of laser intensity, laser wavelength, and bias voltage in vacuum and in an Ar plasma. The technique is used to monitor contamination and etching end points in F-containing plasmas.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 117: Symposium C – Process Diagnostics: Materials, Combustion, Fusion , 1988 , 1
Copyright
Copyright © Materials Research Society 1988

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References

[1] Winters, H. F., Coburn, J. W. and Chuang, T. J., J. Vac. Sci. Technol., B1 (1983) 469. J. F. Morar, F. R. McFeely, N. D. Shinn, G. Landgren and F. J. Himpsel, Appl. Phys. Lett., 45 (1984) 174. F. R. McFeely, J. F. Morar, N. D. Shinn, G. Landgren and F. J. Himpsel, Phys. Rev. 30, 764 (1984).Google Scholar
[2] Downey, S. W., Mitchell, A., and Gottscho, R.A., J. Appl. Phys. (in press).Google Scholar
[3] Selwyn, G.S., Ai, B.D., and Singh, J., Appl. Phys. Lett. (in press).Google Scholar
[4] Gottscho, R. A., Burton, R. H., Flamm, D. L., Donnelly, V. M., and Davis, G. P., J. Appl. Phys., 55 (1984) 2707.Google Scholar
[5] Gottscho, R.A., Phys. Rev. A. 36, 2233 (1987).Google Scholar
[6] Fowler, R. H., Phys Rev., 38 (1931) 45.CrossRefGoogle Scholar
[7] Goodman, A. M., Phys. Rev., 144 (1966) 588.Google Scholar
[8] Berglund, C. N. and Powell, R. J., J. Appl. Phys., 42 (1971) 573.CrossRefGoogle Scholar
[9] Shen, Y.R., “The Principles of Nonlinear Optics,” John Wiley & Sons (New York 1984), chapter 25.Google Scholar
[10] Naaman, R., Petrank, A. and Lubman, D. M., J. Chem. Phys., 79 (1983) 4608. A. Petrank and R. Naaman, J. Phys. Chem., 88 (1984) 3924.Google Scholar
[11] DiStefano, T.H. and Viggiano, J.M., IBM J. Res. Develop. 94 (1974).Google Scholar