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Photoelectrochemical etching of GaN

Published online by Cambridge University Press:  10 February 2011

C. Youtsey ,
G. Bulman  and
I. Adesida
C. Youtsey
Affiliation:
Microelectronics Laboratory and Dept. of Electrical and Computer Engineering, University of Illinois at Urbana-Champaign, Urbana, IL 61801
G. Bulman
Affiliation:
CREE Research, Inc, Durham, NC 27713
I. Adesida
Affiliation:
Microelectronics Laboratory and Dept. of Electrical and Computer Engineering, University of Illinois at Urbana-Champaign, Urbana, IL 61801
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Abstract

A photoelectrochemical etching process for n-type GaN using KOH solution and broad-area Hg arc lamp illumination is described. Etch rates as high as 320 nm/min are obtained. The etch rate is investigated as a function of light intensity for stirred and unstirred solutions. Preliminary results on etching of Al0.1Ga0.9N layers are reported.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 468: Symposium D – Gallium Nitride and Related Materials II , 1997 , 349
Copyright
Copyright © Materials Research Society 1997

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References

REFERENCES

[1] Gillis, H.P., Choutov, D.A., and Martin, K.P., J. Mater., 48, p. 50 (1996).Google Scholar
[2] Pearton, S.J., Abemathy, C.R., Ren, F., Lothian, J.R., Wisk, P.W., and Katz, A., J. Vac. Sci. Technol. A, 11, p. 1772, (1993).Google Scholar
[3] Minsky, M., White, M., and Hu, E.L., Appl. phys. Lett., 68, p. 1531 (1996).Google Scholar
[4] Ruberto, M.N., Zhang, X., Scarmozzino, R., Willner, A.E., Podlesnik, D.V., and Osgood, R.M., J. Electrochem. Soc, 138, p. 1174 (1991)Google Scholar
[5] Khare, R. and Hu, E.L., J. Electrochem. Soc, 138, p. 1516 (1991).Google Scholar
[6] Lu, H., Wu, Z., and Bhat, I., Materials Research Society Fall 1996 Proceedings.Google Scholar
[7] Youtsey, C., Bulman, G., and Adesida, I., Electron. Lett., 33, p. 245 (1997).Google Scholar