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Photoelectrochemical Deposition of Metal Patterns on Semiconductors

Published online by Cambridge University Press:  15 February 2011

Timothy L. Rose ,
Ronald H. Micheels ,
David H. Longendorfer  and
R. David Rauh
Timothy L. Rose
Affiliation:
EIC Laboratories, Inc., 111 Chapel Street, Newton, MA 02158, USA
Ronald H. Micheels
Affiliation:
EIC Laboratories, Inc., 111 Chapel Street, Newton, MA 02158, USA
David H. Longendorfer
Affiliation:
EIC Laboratories, Inc., 111 Chapel Street, Newton, MA 02158, USA
R. David Rauh
Affiliation:
EIC Laboratories, Inc., 111 Chapel Street, Newton, MA 02158, USA
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Abstract

Microscopic metal patterns may be produced on p-type semiconductors using a maskless photoelectrochemical procedure in which electroplating is induced by minority carriers in illuminated portions of a semiconductor electrode. Resolution exceeding l0μ has been achieved for deposits of Au on p-GaAs and Cu on p-Si. “Electroless” imaging and negative photoelectrochemical imaging are also discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 17: Symposium I – Laser Diagnostics and Photochemical Processing for Semiconductor Devices , 1982 , 265
Copyright
Copyright © Materials Research Society 1983

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References

REFERENCES

1. Micheels, R. H., Darrow, A. D. and Rauh, R. D., Appl. Phys. Lett. 39, 418 (1981).CrossRefGoogle Scholar
2. Inoue, T., Fiyishima, A. and Honda, K., J. Electrochem. Soc. 127, 1582 (1980).CrossRefGoogle Scholar
3. (a) Deutsch, T. F., Ehrlich, D. J. and Osgood, R. M., Appl. Phys. Lett. 35, 175 (1979);CrossRefGoogle Scholar
(b) Ehrlich, D. J., Osgood, R. M. and Deutsch, T. F., Appl. Phys. Lett. 38, 946 (1981).Google Scholar
4. (a) Karlicek, R. F., Donnelly, V. M. and Collins, G. J., J. Appl. Phys. 53, 1084 (1982);CrossRefGoogle Scholar
(b) von Gutfeld, R. J., Tynan, E. E., Melcher, R. L. and Blum, S. E., Appl. Phys. Lett. 35, 651 (1979).CrossRefGoogle Scholar
5. Madou, M. J., Loo, B. H., Frese, K. W. and Morrison, S. R., Surf. Sci. 108, 135 (1981).CrossRefGoogle Scholar
6. Rose, T. L., Longendorfer, D. H. and Rauh, R. D., Appl. Phys. Lett., in press.Google Scholar
7. Belyakov, L. V., Goryachev, D. N., Ryvkin, S. M. and Sreseli, O. M., Sov. Phys. Semicond. 12, 1334 (1978).Google Scholar
8. Alferov, Zh. I., Goryachev, D. N., Gurevich, S. A., Mizerov, M. N., Portnoi, E. L. and Ryvkin, B. S., Sov. Phys. Tech. Phys. 21, 857 (1976).Google Scholar