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Photoelectric Emission Studies from Crystalline Silicon at 266 Nm

Published online by Cambridge University Press:  22 February 2011

A. M. Malvezzi ,
J. M. Liu  and
N. Bloembergen
A. M. Malvezzi
Affiliation:
Division of Applied Sciences, Harvard University, Cambridge MA 02138;
J. M. Liu
Affiliation:
Division of Applied Sciences, Harvard University, Cambridge MA 02138;
N. Bloembergen
Affiliation:
Division of Applied Sciences, Harvard University, Cambridge MA 02138;
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Abstract

Three different photoelectric regimes are observed in the interaction of 15 ps, 266 nm laser pulses with crystalline silicon samples versus light fluence. A superposition of linear and quadratic photoionization is followed by a space charge limited regime up to the critical fluence F4ωth for the surface amorphization where highly nonlinear ion emission is observed. Ion and electron emissions become equal in magnitude at a fluence - ∼ 2F4ωth The absence of observable thermionic effects indicates that thermal equilibrium of the electronhole plasma and the lattice is reached during the laser pulse duration.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 23 , 1983 , 135
Copyright
Copyright © Materials Research Society 1984

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Footnotes

*

Present address: Department of Electrical and Computer Engineering, Bell Hall, SUNY at Buffalo, Amherst, NY 14260

References

REFERENCES

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