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Photoelastic Waveguides In Sige/Si Heterostructures And Bulk Si

Published online by Cambridge University Press:  10 February 2011

E. Lea ,
B. L. Weiss ,
H. Rho  and
H. E. Jackson
E. Lea
Affiliation:
School of Electronic Engineering, Information Technology & Mathematics, University of Surrey, Guildford, Surrey, GU2 5XH, UK
B. L. Weiss
Affiliation:
School of Electronic Engineering, Information Technology & Mathematics, University of Surrey, Guildford, Surrey, GU2 5XH, UK
H. Rho
Affiliation:
Department of Physics, University of Cincinnati, Cincinnati, Ohio 45220-0011, USA
H. E. Jackson
Affiliation:
Department of Physics, University of Cincinnati, Cincinnati, Ohio 45220-0011, USA
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Abstract

Photoelastic waveguides in bulk Si and SiGe/Si heterostructures have been modelled and characterised. The calculated transverse strain profiles of photoelastic waveguide structures in SiGe/Si heterostructures and bulk silicon are in good agreement with those obtained by microRaman experiments. The waveguide characteristics are also found to be in good agreement with those obtained from the strain modelling and demonstrate that low loss waveguides can be fabricated using these structures

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 486: Symposium H – Materials & Devices for Silicon Based Optoelectronics , 1997 , 95
Copyright
Copyright © Materials Research Society 1998

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