Hostname: page-component-cd9895bd7-7cvxr Total loading time: 0 Render date: 2024-12-27T02:22:21.968Z Has data issue: false hasContentIssue false
  • English
  • Français

Photoelastic Waveguides In Sige/Si Heterostructures And Bulk Si

Published online by Cambridge University Press:  10 February 2011

E. Lea ,
B. L. Weiss ,
H. Rho  and
H. E. Jackson
E. Lea
Affiliation:
School of Electronic Engineering, Information Technology & Mathematics, University of Surrey, Guildford, Surrey, GU2 5XH, UK
B. L. Weiss
Affiliation:
School of Electronic Engineering, Information Technology & Mathematics, University of Surrey, Guildford, Surrey, GU2 5XH, UK
H. Rho
Affiliation:
Department of Physics, University of Cincinnati, Cincinnati, Ohio 45220-0011, USA
H. E. Jackson
Affiliation:
Department of Physics, University of Cincinnati, Cincinnati, Ohio 45220-0011, USA
Get access

Abstract

Photoelastic waveguides in bulk Si and SiGe/Si heterostructures have been modelled and characterised. The calculated transverse strain profiles of photoelastic waveguide structures in SiGe/Si heterostructures and bulk silicon are in good agreement with those obtained by microRaman experiments. The waveguide characteristics are also found to be in good agreement with those obtained from the strain modelling and demonstrate that low loss waveguides can be fabricated using these structures

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 486: Symposium H – Materials & Devices for Silicon Based Optoelectronics , 1997 , 95
Copyright
Copyright © Materials Research Society 1998

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Soref, R.A., Proc. IEEE, 81, p. 1687–1706 (1993).Google Scholar
2. Pesarcik, S.F., Trez, G.V., Iyer, S.S. and Halbout, J.M., Electron. Lett., 28, p. 159–160 (1992).Google Scholar
3. Schmidtchen, J., Schuppert, B. and Peterman, K., IEEE J. Lightwave Technol., 12, p. 842–848 (1994).Google Scholar
4. Lea, E. and Weiss, B.L., Electron. Lett., 32, p.1577–1579 (1996) and erratum in 33, p. 644 (1997).Google Scholar
5. Lea, E. and Weiss, B.L., Electron. Lett., 33, p.292–293 (1997) and erratum in 33, p. 644 (1997).Google Scholar
6. Yu, L.S., Guan, Z.F. Liu, Q.Z. and Lau, S.S., Appl. Phys. Lett., 66, p.2016–2018 (1995).Google Scholar
7. Kirkby, P.A., Selway, P.R. and Westbrook, L.D., J. Appl. Phys., 50, p. 4567–4579 (1979).Google Scholar
8. Benson, T.M., Murotani, T. and Robson, P.N., IEEE Trans. Electron Devices, ED-19, p.1477–1483 (1982).Google Scholar