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Photoelastic Imaging of Process Induced Defects in 300mm-Silicon Wafers

Published online by Cambridge University Press:  10 February 2011

H.D. Geiler ,
W. Kürner  and
O. Storbeck
H.D. Geiler
Affiliation:
JenaWave Engineering & Consulting, Konrad-Zuse-Str.5, D-07745 Jena, Germany
W. Kürner
Affiliation:
SEMICONDUCTOR300, P.O.B.10 04 46, D-01074 Dresden, Germany
O. Storbeck
Affiliation:
SEMICONDUCTOR300, P.O.B.10 04 46, D-01074 Dresden, Germany
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Abstract

Process induced crystal defects in silicon wafers can be detected by their stress fields. The nondestructive photoelasticity based on laser polarimetry is applied to visualize the stress fields of temperture gradient induced lattice defects like sliplines or extended defect areas around boat marks. The quantitative evaluation of the defects allows their characterization by a specific danger potential for further evolution causing upstream problems in IC manufacturing.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 591 , 1999 , 249
Copyright
Copyright © Materials Research Society 2000

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References

REFERENCES

[1]Ehlert, A., Kerstan, M., Helmreich, D., Geiler, H.D., Wagner, M. and Karge, H., in Proc. DRIP‘97, ed. by Donecker, J. and Rechenberg, I. (Inst.of Physics Conf.Ser. no 160, IOP Bristol 1997) p.107Google Scholar
[2]Azzam, R.M.A. and Bashara, N.M., Ellipsometry and Polarized Light, (North-Holland Amsterdam 1989) p.51Google Scholar
[3]Kingston, R.H., Detection of Optical and Infrared Radiation, in Springer Series in Optical Sci. VoL 10, ed. By MacAdam, D.L., (Springer, Berlin 1978) p.24Google Scholar
[4]Dally, J.W. and Riley, W.F., Experimental Stress Analysis, (McGraw-Hill, New York 1991) p.78 and 429Google Scholar
[5]Liang, H., Pan, Y., Zhao, Sh., Qin, G. and Chin, K.K., J.Appl. Phys. 71, 2863 (1992)Google Scholar
[6]Tetelman, A.S. and McEvily, A.J., Fracture of Structural Materials, (Wiley New York 1967) p.166Google Scholar
[7] AkEhlert, Kerstan, M., Lundt, H., Huber, A., Helmreich, D., Geiler, H.D., Karge, H. and Wagner, M., Opt. Eng. 36,446 (1997)Google Scholar
[8]Nabarro, F.R.N, Theory of Crystal Dislocations, (Dover, New York 1987) p.57Google Scholar