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Photodissociation of Chlorine on a Cooled Silicon Wafer

Published online by Cambridge University Press:  25 February 2011

Masahiro Kawasaki ,
Hiroyasu Sato  and
Nobuyuki Nishi
Masahiro Kawasaki
Affiliation:
Research Institute of Applied Electricity, Hokkaido University, Sapporo 060, Japan
Hiroyasu Sato
Affiliation:
Chemistry Department of Resources.Mi'e University, Tsu 514, Japan
Nobuyuki Nishi
Affiliation:
Institute for Molecular Science, Okazaki 444., Japan
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Abstract

Laser irradiation at 193 nm of multilayered Cl2 on an Si wafer cooled to 100 K leads to both photodissociation of Cl2 and formation of photoetching products.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 129: Symposium B – Laser and Particle-Beam Modification of Chemical Processes on Surfaces , 1988 , 305
Copyright
Copyright © Materials Research Society 1989

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References

REFERENCES

1. Tachi, S., Tsujimoto, K., and Okudaira, S., Appl. Phys. Lett, 52, 616 (1988)Google Scholar
2. Bourdon, E.B.D., Cowin, J.P., Harrison, I., Polanyi, J.C., Segner, J., Stanners, C.D., and Young, P.A., J. Phys. Chem., 88 6100 (1984)Google Scholar
3. Tabares, F.L., Marsh, E.P., Bach, G.A., and Cowin, J.P., J. Chem. Phys., 86, 738 (1987)CrossRefGoogle Scholar
4. Bourdon, E.B.D.. Das, P., Harrison, I., Polanyi, J.C., Segner, J., Stanners, C.D., Williams, R.J., and Young, P.A., Discuss. Faraday Soc., 82, 343 (1986)Google Scholar
5. Higashi, G.S., J. Chem. Phys., 88, 422 (1988)CrossRefGoogle Scholar
6. a) Burgess, D. Jr., Viswanathan, R., Hussla, I., Stair, P.C., and Weitz, E., J. Chem. Phys., 79, 5200 (1983) b) D. Burgess, Jr. D.A. Mantell, R.R. Cavanagh, and D.S. King, J. Chem. Phys., 85, 3127 (1986)Google Scholar
7. Kawasaki, M., Kasatani, K., Sato, H., Nishi, N., and Inoue, G., 12th Internat. Conf. Photochem. (Tokyo, Aug. 4-9, 1985), lA06 Google Scholar
8. Nishi, N., Shinohara, M., and Okuyama, T., J. Chem. Phys., 80, 3898 (1984)CrossRefGoogle Scholar
9. Chuang, T.J. and Domen, K.. J. Vac. Sci. Technol., A5, 473 (1987)Google Scholar
10. Gerlach-Meyer, U., Coburn, J.W. and Kay, E., Surface Sci., 103, 524 (1981)CrossRefGoogle Scholar
11. Sanders, F.H.M., Kolfschoten, A.W., Dielman, J., Haring, R.A., Haring, A., and Vries, A.E. de, J. Vac. Sci. Technol, A2, 487 (1984); D.J. Oostra, A. Haring, R.P. Van Ingen, and A.E. de Vries, J. Appl. Phys. 64, 325 (1988)Google Scholar
12. a) Flamm, D.L., Donnelly, V.M., and Mucha, J.A., J. Appl. Phys., 52, 3633 (1981).CrossRefGoogle Scholar
b) Matsumi, Y., Toyoda, S., Hayashi, T., Miyamura, M., Yoshikawa, H., and Komiya, S., J. Appl. Phys. 60, 4102 (1986)CrossRefGoogle Scholar
13. a) Ehlich, D. J., Osgood, R. M. Jr, and Deutsch, T.F.. Appl. Phys. Lett., 38, 1018 (1981) b) T.J. Chuang. IBM J. Res. Develop., 26, 145 (1982) c) F.A. Houle, J. Chem. Phys., 80, 4851(10984)CrossRefGoogle Scholar